公开(公告)号：US11563322B2

公开(公告)日：2023-01-24

申请号：US17019746

申请日：2020-09-14

Applicant: Infineon Technologies AG

Inventor： Dethard Peters ,  Thomas Basler ,  Paul Sochor

IPC: H02H3/20 ,  H02H9/04 ,  H01L27/06 ,  H01L49/02 ,  H01L29/16 ,  H01L29/20 ,  H01L29/78 ,  H01L29/808 ,  H01L29/92

Abstract: An apparatus includes a unipolar power transistor and an RC snubber. The RC snubber has a capacitor between a poly silicon structure and a semiconductor substrate. The capacitor has a p-n junction. The RC snubber has a resistor between a source of the unipolar power transistor and a first layer forming the capacitor. The unipolar transistor and the RC snubber are coupled in parallel. The RC snubber and the unipolar power transistor are formed monolithically on the semiconductor substrate.