公开(公告)号：US20190385866A1

公开(公告)日：2019-12-19

申请号：US16007038

申请日：2018-06-13

Applicant: Infineon Technologies AG

Inventor： Rabie Djemour ,  Michael Bauer ,  Stefan Miethaner

IPC: H01L21/56 ,  H01L21/67 ,  H01L23/29

Abstract: A method for manipulating ions contained in an encapsulation material for a semiconductor device is provided. The method includes processing the encapsulation material and applying an electric field to the encapsulation material before the encapsulation material is finally cured. The ions contained in the encapsulation material have a mobility that decreases as the encapsulation material cures. By applying the electric field to the encapsulation material before the encapsulation material is finally cured, the amount of ions contained in the encapsulation material is reduced and/or the ions contained are concentrated in one or more regions of the encapsulation material. Corresponding apparatuses and semiconductor packages manufactured by the method are also described.

公开(公告)号：US10497587B1

公开(公告)日：2019-12-03

申请号：US16007038

申请日：2018-06-13

Applicant: Infineon Technologies AG

Inventor： Rabie Djemour ,  Michael Bauer ,  Stefan Miethaner

IPC: H01L21/00 ,  H01L21/56 ,  H01L23/29 ,  H01L21/67

Abstract: A method for manipulating ions contained in an encapsulation material for a semiconductor device is provided. The method includes processing the encapsulation material and applying an electric field to the encapsulation material before the encapsulation material is finally cured. The ions contained in the encapsulation material have a mobility that decreases as the encapsulation material cures. By applying the electric field to the encapsulation material before the encapsulation material is finally cured, the amount of ions contained in the encapsulation material is reduced and/or the ions contained are concentrated in one or more regions of the encapsulation material. Corresponding apparatuses and semiconductor packages manufactured by the method are also described.

公开(公告)号：US20230282736A1

公开(公告)日：2023-09-07

申请号：US17686506

申请日：2022-03-04

Applicant: Infineon Technologies AG

Inventor： Rabie Djemour ,  Hannes Mathias Geike ,  Anton Mauder

IPC: H01L29/739 ,  H01L29/06 ,  H01L29/40

CPC classification number: H01L29/7397 ,  H01L29/0615 ,  H01L29/407

Abstract: A semiconductor die includes: a semiconductor substrate; transistor cells formed in a first region of the semiconductor substrate and electrically coupled in parallel to form a power transistor, the transistor cells including first trenches that extend from a first surface of the semiconductor substrate into the first region; a gate pad formed above the first surface and electrically connected to gate electrodes in the first trenches, the gate pad being formed over a second region of the semiconductor substrate that is devoid of functional transistor cells; second trenches extending from the first surface into the second region and including gate electrodes that are electrically connected to the gate pad and form a first conductor of an additional input capacitance of the power transistor; and a second conductor of the additional input capacitance formed in the second region adjacent the second trenches. Methods of producing the semiconductor die are also described.

公开(公告)号：US20220359314A1

公开(公告)日：2022-11-10

申请号：US17737492

申请日：2022-05-05

Applicant: Infineon Technologies AG

Inventor： Rabie Djemour ,  Anton Mauder

IPC: H01L21/66 ,  G01K7/01 ,  G01K7/16

Abstract: A semiconductor device includes a semiconductor portion with a first surface at a front side, wherein the semiconductor portion includes an active area, a termination structure laterally surrounding the active area, and a field-free region between the termination structure and a lateral outer surface of the semiconductor portion. The field-free region includes a probe contact region and a main portion. The probe contact region and the main portion form a semiconductor junction. A probe pad on the first surface and the probe contact region form an ohmic contact. A protection passivation layer on the first surface is formed on at least the termination structure and exposes the probe pad.