公开(公告)号：US11387359B2

公开(公告)日：2022-07-12

申请号：US16713392

申请日：2019-12-13

Applicant: Infineon Technologies AG

Inventor： Oliver Humbel ,  Josef-Georg Bauer ,  Jens Brandenburg ,  Diana Car ,  Philipp Sebastian Koch ,  Angelika Koprowski ,  Sebastian Kremp ,  Thomas Kurzmann ,  Erwin Lercher ,  Holger Ruething

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/66 ,  H01L29/739

Abstract: A power semiconductor device having a power semiconductor transistor configuration includes: a semiconductor body having a front side coupled to a first load terminal structure, a backside coupled to a second load terminal structure, and a lateral chip edge; an active region for conducting a load current in a conducting state; and an edge termination region separating the active region and lateral chip edge. At the front-side, the edge termination region includes a protection region devoid of any metallic structure, unless the metallic structure is electrically shielded from below by a polysilicon layer that extends further towards the lateral chip edge than the metallic structure by a lateral distance of at least 20 μm. In a blocking state, the protection region accommodates a voltage change of at least 90% of a blocking voltage inside the semiconductor body in a lateral direction from the active region towards the lateral chip edge.