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公开(公告)号：US11387359B2
公开(公告)日：2022-07-12
申请号：US16713392
申请日：2019-12-13
发明人： Oliver Humbel , Josef-Georg Bauer , Jens Brandenburg , Diana Car , Philipp Sebastian Koch , Angelika Koprowski , Sebastian Kremp , Thomas Kurzmann , Erwin Lercher , Holger Ruething
IPC分类号： H01L29/78 , H01L29/06 , H01L29/66 , H01L29/739
摘要： A power semiconductor device having a power semiconductor transistor configuration includes: a semiconductor body having a front side coupled to a first load terminal structure, a backside coupled to a second load terminal structure, and a lateral chip edge; an active region for conducting a load current in a conducting state; and an edge termination region separating the active region and lateral chip edge. At the front-side, the edge termination region includes a protection region devoid of any metallic structure, unless the metallic structure is electrically shielded from below by a polysilicon layer that extends further towards the lateral chip edge than the metallic structure by a lateral distance of at least 20 μm. In a blocking state, the protection region accommodates a voltage change of at least 90% of a blocking voltage inside the semiconductor body in a lateral direction from the active region towards the lateral chip edge.
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公开(公告)号：US09859395B2
公开(公告)日：2018-01-02
申请号：US14502882
申请日：2014-09-30
发明人： Gerhard Schmidt , Josef-Georg Bauer , Carsten Schaeffer , Oliver Humbel , Angelika Koprowski , Sirinpa Monayakul
IPC分类号： H01L21/02 , H01L29/66 , H01L29/40 , H01L29/861 , H01L29/739 , H01L29/78 , H01L23/31 , H01L21/283 , H01L29/47 , H01L29/06
CPC分类号： H01L29/66143 , H01L21/02115 , H01L21/02167 , H01L21/0217 , H01L21/02203 , H01L21/283 , H01L23/3171 , H01L23/3192 , H01L29/0615 , H01L29/0638 , H01L29/408 , H01L29/47 , H01L29/7397 , H01L29/7811 , H01L29/7813 , H01L29/8611 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes a semiconductor body with a first surface, a contact electrode arranged on the first surface, and a passivation layer on the first surface adjacent the contact electrode. The passivation layer includes a layer stack with an amorphous semi-insulating layer on the first surface, a first nitride layer on the amorphous semi-insulating layer, and a second nitride layer on the first nitride layer.
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3.发明授权公开(公告)号：US11075134B2
公开(公告)日：2021-07-27
申请号：US16556642
申请日：2019-08-30
发明人： Markus Kahn , Oliver Humbel , Philipp Sebastian Koch , Angelika Koprowski , Christian Maier , Gerhard Schmidt , Juergen Steinbrenner
摘要： A semiconductor device includes a semiconductor body and a first portion including silicon and nitrogen. The first portion is in direct contact with the semiconductor body. A second portion including silicon and nitrogen is in direct contact with the first portion. The first portion is between the semiconductor body and the second portion. An average silicon content in the first portion is higher than in the second portion.
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公开(公告)号：US20210151391A1
公开(公告)日：2021-05-20
申请号：US17086979
申请日：2020-11-02
摘要： A high voltage semiconductor device includes a high voltage electrically conductive structure and a step topography at or in the vicinity of the high voltage electrically conductive structure. A layer stack covers the step topography. The layer stack includes an electrically insulating buffer layer, a SiC layer over the electrically insulating buffer layer and a silicon nitride layer over the SiC layer or a nitrided surface region of the SiC layer.
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公开(公告)号：US10199291B2
公开(公告)日：2019-02-05
申请号：US15683460
申请日：2017-08-22
IPC分类号： H01L29/78 , H01L21/66 , H01L29/739 , H01L29/45 , H01L29/47
摘要： A semiconductor arrangement is presented. The semiconductor arrangement comprises a semiconductor body, the semiconductor body including a semiconductor drift region, wherein the semiconductor drift region has dopants of a first conductivity type; a first semiconductor sense region and a second semiconductor sense region, wherein each of the first semiconductor sense region and the second semiconductor sense region is electrically connected to the semiconductor drift region and has dopants of a second conductivity type different from said first conductivity type; a first metal contact comprising a first metal material, the first metal contact being in contact with the first semiconductor sense region, wherein a transition between the first metal contact and the first semiconductor sense region forms a first metal-to-semiconductor transition; a second metal contact comprising a second metal material different from said first metal material, the second metal contact being separated from the first metal contact and in contact with the second semiconductor sense region, a transition between the second metal contact and the second semiconductor sense region forming a second metal-to-semiconductor transition different from said first metal-to-semiconductor transition; first electrical transmission means, the first electrical transmission means being arranged and configured for providing a first sense signal derived from an electrical parameter of the first metal contact to a first signal input of a sense signal processing unit; and second electrical transmission means separated from said first electrical transmission means, the second electrical transmission means being arranged and configured for providing a second sense signal derived from an electrical parameter of the second metal contact to a second signal input of said sense signal processing unit.
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公开(公告)号：US09793184B2
公开(公告)日：2017-10-17
申请号：US15062828
申请日：2016-03-07
IPC分类号： H01L29/78 , H01L21/66 , H01L29/739 , H01L29/45 , H01L29/47
CPC分类号： H01L22/30 , H01L22/20 , H01L29/456 , H01L29/47 , H01L29/7393 , H01L29/7801
摘要： A semiconductor arrangement is presented. The semiconductor arrangement comprises a semiconductor body, the semiconductor body including a semiconductor drift region, wherein the semiconductor drift region has dopants of a first conductivity type; a first semiconductor sense region and a second semiconductor sense region, wherein each of the first semiconductor sense region and the second semiconductor sense region is electrically connected to the semiconductor drift region and has dopants of a second conductivity type different from said first conductivity type; a first metal contact comprising a first metal material, the first metal contact being in contact with the first semiconductor sense region, wherein a transition between the first metal contact and the first semiconductor sense region forms a first metal-to-semiconductor transition; a second metal contact comprising a second metal material different from said first metal material, the second metal contact being separated from the first metal contact and in contact with the second semiconductor sense region, a transition between the second metal contact and the second semiconductor sense region forming a second metal-to-semiconductor transition different from said first metal-to-semiconductor transition; first electrical transmission means, the first electrical transmission means being arranged and configured for providing a first sense signal derived from an electrical parameter of the first metal contact to a first signal input of a sense signal processing unit; and second electrical transmission means separated from said first electrical transmission means, the second electrical transmission means being arranged and configured for providing a second sense signal derived from an electrical parameter of the second metal contact to a second signal input of said sense signal processing unit.
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7.发明申请公开(公告)号：US20150115449A1
公开(公告)日：2015-04-30
申请号：US14068398
申请日：2013-10-31
IPC分类号： H01L23/532 , H01L21/768
CPC分类号： H01L23/53219 , H01L21/76846 , H01L23/4824 , H01L29/404 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes a semiconductor substrate having a first side, a second side opposite the first side, an active area, an outer rim, and an edge termination area arranged between the outer rim and the active area. A metallization structure is arranged on the first side of the semiconductor substrate and comprising at least a first metal layer comprised of a first metallic material and a second metal layer comprised of a second metallic material, wherein the first metallic material is electrochemically more stable than the second metallic material. The first metal layer extends laterally further towards the outer rim than the second metal layer.
摘要翻译： 半导体器件包括具有第一侧，与第一侧相对的第二侧，有源区，外缘和布置在外缘和有源区之间的边缘终端区的半导体衬底。 金属化结构布置在半导体衬底的第一侧上，并且至少包括由第一金属材料构成的第一金属层和由第二金属材料构成的第二金属层，其中第一金属材料在电化学上比 第二金属材料。 第一金属层比第二金属层向外侧边延伸。
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公开(公告)号：US20150056788A1
公开(公告)日：2015-02-26
申请号：US14502882
申请日：2014-09-30
发明人： Gerhard Schmidt , Josef-Georg Bauer , Carsten Schaeffer , Oliver Humbel , Angelika Koprowski , Sirinpa Monayakul
IPC分类号： H01L29/66 , H01L21/02 , H01L21/283 , H01L29/47
CPC分类号： H01L29/66143 , H01L21/02115 , H01L21/02167 , H01L21/0217 , H01L21/02203 , H01L21/283 , H01L23/3171 , H01L23/3192 , H01L29/0615 , H01L29/0638 , H01L29/408 , H01L29/47 , H01L29/7397 , H01L29/7811 , H01L29/7813 , H01L29/8611 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes a semiconductor body with a first surface, a contact electrode arranged on the first surface, and a passivation layer on the first surface adjacent the contact electrode. The passivation layer includes a layer stack with an amorphous semi-insulating layer on the first surface, a first nitride layer on the amorphous semi-insulating layer, and a second nitride layer on the first nitride layer.
摘要翻译： 半导体器件包括具有第一表面的半导体本体，布置在第一表面上的接触电极以及与接触电极相邻的第一表面上的钝化层。 钝化层包括在第一表面上具有非晶半绝缘层的层叠层，非晶半绝缘层上的第一氮化物层和第一氮化物层上的第二氮化物层。
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公开(公告)号：US20170352602A1
公开(公告)日：2017-12-07
申请号：US15683460
申请日：2017-08-22
IPC分类号： H01L21/66 , H01L29/78 , H01L29/739 , H01L29/47 , H01L29/45
CPC分类号： H01L22/30 , H01L22/20 , H01L29/456 , H01L29/47 , H01L29/7393 , H01L29/7801
摘要： A semiconductor arrangement is presented. The semiconductor arrangement comprises a semiconductor body, the semiconductor body including a semiconductor drift region, wherein the semiconductor drift region has dopants of a first conductivity type; a first semiconductor sense region and a second semiconductor sense region, wherein each of the first semiconductor sense region and the second semiconductor sense region is electrically connected to the semiconductor drift region and has dopants of a second conductivity type different from said first conductivity type; a first metal contact comprising a first metal material, the first metal contact being in contact with the first semiconductor sense region, wherein a transition between the first metal contact and the first semiconductor sense region forms a first metal-to-semiconductor transition; a second metal contact comprising a second metal material different from said first metal material, the second metal contact being separated from the first metal contact and in contact with the second semiconductor sense region, a transition between the second metal contact and the second semiconductor sense region forming a second metal-to-semiconductor transition different from said first metal-to-semiconductor transition; first electrical transmission means, the first electrical transmission means being arranged and configured for providing a first sense signal derived from an electrical parameter of the first metal contact to a first signal input of a sense signal processing unit; and second electrical transmission means separated from said first electrical transmission means, the second electrical transmission means being arranged and configured for providing a second sense signal derived from an electrical parameter of the second metal contact to a second signal input of said sense signal processing unit.
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10.发明授权Semiconductor device having a corrosion-resistant metallization and method for manufacturing thereof 有权具有耐腐蚀性金属化的半导体装置及其制造方法公开(公告)号：US09355958B2
公开(公告)日：2016-05-31
申请号：US14068398
申请日：2013-10-31
IPC分类号： H01L23/532 , H01L21/768 , H01L29/40 , H01L23/482
CPC分类号： H01L23/53219 , H01L21/76846 , H01L23/4824 , H01L29/404 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes a semiconductor substrate having a first side, a second side opposite the first side, an active area, an outer rim, and an edge termination area arranged between the outer rim and the active area. A metallization structure is arranged on the first side of the semiconductor substrate and comprising at least a first metal layer comprised of a first metallic material and a second metal layer comprised of a second metallic material, wherein the first metallic material is electrochemically more stable than the second metallic material. The first metal layer extends laterally further towards the outer rim than the second metal layer.
摘要翻译： 半导体器件包括具有第一侧，与第一侧相对的第二侧，有源区，外缘和布置在外缘和有源区之间的边缘终端区的半导体衬底。 金属化结构布置在半导体衬底的第一侧上，并且至少包括由第一金属材料构成的第一金属层和由第二金属材料构成的第二金属层，其中第一金属材料在电化学上比 第二金属材料。 第一金属层比第二金属层向外侧边延伸。
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