公开(公告)号：US20140083973A1

公开(公告)日：2014-03-27

申请号：US14092624

申请日：2013-11-27

Applicant: Infineon Technologies AG

Inventor： Sandra Obernhuber ,  Christof Jalics ,  Joerg Adler ,  Uwe Hoeckele ,  Walter Preis ,  Reinhard Goellner ,  Tanja Schest ,  Patricia Nickut

IPC: H01L41/297

CPC classification number: H01L41/297 ,  H03H3/04

Abstract: A method for manufacturing a device on a substrate includes forming a layer structure on the substrate, forming an auxiliary layer on the layer structure, forming a planarization layer on the auxiliary layer and on the substrate, exposing the auxiliary layer by a chemical mechanical polishing process and removing at least partly the auxiliary layer to form a planar surface of the remaining auxiliary layer or of the layer structure and the planarization layer. The chemical mechanical polishing process has a first removal rate with respect to the planarization layer and a second removal rate with respect to the auxiliary layer and the first removal rate is greater than the second removal rate.

Abstract translation: 在衬底上制造器件的方法包括在衬底上形成层结构，在层结构上形成辅助层，在辅助层和衬底上形成平坦化层，通过化学机械抛光工艺使辅助层露出 以及至少部分去除所述辅助层以形成剩余辅助层或所述层结构和所述平坦化层的平坦表面。 化学机械抛光工艺相对于平坦化层具有第一去除速率，相对于辅助层具有第二去除速率，并且第一去除速率大于第二去除速率。