公开(公告)号：US10262889B2

公开(公告)日：2019-04-16

申请号：US15602245

申请日：2017-05-23

Applicant: Infineon Technologies AG

Inventor： Torsten Helm ,  Marc Probst ,  Uwe Rudolph

IPC: H01L21/00 ,  H01L21/74 ,  H01L23/535

Abstract: An integrated circuit includes a first trench disposed in a semiconductor material, wherein a width of the first trench in an upper portion of the first trench adjacent to a surface of the semiconductor material is smaller than a width of the first trench in a lower portion of the first trench, the lower portion being disposed within the semiconductor material, each width being measured in a plane parallel to a surface of the semiconductor material, each width denoting a distance between inner faces of remaining semiconductor material portions or between outer faces of a filling disposed in the first trench, or between an inner face of a remaining semiconductor material portion and an outer face of a filling disposed in the first trench.

公开(公告)号：US10748807B2

公开(公告)日：2020-08-18

申请号：US16293795

申请日：2019-03-06

Applicant: Infineon Technologies AG

Inventor： Torsten Helm ,  Marc Probst ,  Uwe Rudolph

IPC: H01L23/535 ,  H01L21/74 ,  H01L29/06

Abstract: A semiconductor device includes a semiconductor body having a main surface and a rear surface opposite the main surface, and a trench that extends from the main surface of the semiconductor body towards the rear surface, the trench having an upper trench portion and a lower trench portion, the trench having a width measured along a plane parallel to the main surface. The upper trench portion includes curved sidewalls that that bow outward from a bottom of the upper trench portion. The lower trench portion includes generally planar sidewalls that extend from bottom of the upper trench portion at a first depth into the semiconductor body along the first direction to a contact region. An electrically conductive contact electrode is within the trench, is electrically insulated from the semiconductor body along sidewalls of the trench, and electrically connects to the semiconductor body at a bottom of the trench.

公开(公告)号：US20190198380A1

公开(公告)日：2019-06-27

申请号：US16293795

申请日：2019-03-06

Applicant: Infineon Technologies AG

Inventor： Torsten Helm ,  Marc Probst ,  Uwe Rudolph

IPC: H01L21/74 ,  H01L23/535

CPC classification number: H01L21/743 ,  H01L23/535 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device includes a semiconductor body having a main surface and a rear surface opposite the main surface, and a trench that extends from the main surface of the semiconductor body towards the rear surface, the trench having an upper trench portion and a lower trench portion, the trench having a width measured along a plane parallel to the main surface. The upper trench portion includes curved sidewalls that that bow outward from a bottom of the upper trench portion. The lower trench portion includes generally planar sidewalls that extend from bottom of the upper trench portion at a first depth into the semiconductor body along the first direction to a contact region. An electrically conductive contact electrode is within the trench, is electrically insulated from the semiconductor body along sidewalls of the trench, and electrically connects to the semiconductor body at a bottom of the trench.