公开(公告)号：US20170256437A1

公开(公告)日：2017-09-07

申请号：US15602245

申请日：2017-05-23

Applicant: Infineon Technologies AG

Inventor： Torstern Helm ,  Marc Probst ,  Uwe Rudolph

IPC: H01L21/74 ,  H01L23/535

CPC classification number: H01L21/743 ,  H01L23/535 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An integrated circuit includes a first trench disposed in a semiconductor material, wherein a width of the first trench in an upper portion of the first trench adjacent to a surface of the semiconductor material is smaller than a width of the first trench in a lower portion of the first trench, the lower portion being disposed within the semiconductor material, each width being measured in a plane parallel to a surface of the semiconductor material, each width denoting a distance between inner faces of remaining semiconductor material portions or between outer faces of a filling disposed in the first trench, or between an inner face of a remaining semiconductor material portion and an outer face of a filling disposed in the first trench.