公开(公告)号：US20220087030A1

公开(公告)日：2022-03-17

申请号：US16953338

申请日：2020-11-20

Applicant: InnoLux Corporation

Inventor： Hsueh-Hsuan CHOU ,  Yi-Hung LIN

IPC: H05K3/02 ,  H05K3/00

Abstract: A manufacturing method of a metal structure is disclosed, which includes the following steps: forming a seed layer on a substrate; forming a patterned metal layer on the seed layer, wherein the patterned metal layer includes a metal member; forming a first patterned photoresist layer on the seed layer, wherein a thickness of the first patterned photoresist layer is less than a thickness of the patterned metal layer; and performing a first patterning process to the seed layer through the first patterned photoresist layer to form a patterned seed layer, wherein after the first patterning process, the metal member includes a first part and a second part, the first part is disposed between the patterned seed layer and the second part, and a width of the first part is greater than a width of the second part.

公开(公告)号：US20220087028A1

公开(公告)日：2022-03-17

申请号：US17486935

申请日：2021-09-28

Applicant: InnoLux Corporation

Inventor： Hsueh-Hsuan CHOU ,  Yi-Hung LIN

IPC: H05K3/00 ,  H01L21/48 ,  H05K3/06

Abstract: A manufacturing method of a metal structure is disclosed, which includes the following steps: forming a seed layer on a substrate; forming a patterned metal layer on the seed layer, wherein the patterned metal layer includes a metal member; forming a first patterned photoresist layer on the seed layer, wherein a thickness of the first patterned photoresist layer is less than a thickness of the patterned metal layer; and performing a first patterning process to the seed layer through the first patterned photoresist layer to form a patterned seed layer, wherein after the first patterning process, the metal member includes a first part and a second part, the first part is disposed between the patterned seed layer and the second part, and a width of the first part is greater than a width of the second part.