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公开(公告)号:US20220087030A1
公开(公告)日:2022-03-17
申请号:US16953338
申请日:2020-11-20
Applicant: InnoLux Corporation
Inventor: Hsueh-Hsuan CHOU , Yi-Hung LIN
Abstract: A manufacturing method of a metal structure is disclosed, which includes the following steps: forming a seed layer on a substrate; forming a patterned metal layer on the seed layer, wherein the patterned metal layer includes a metal member; forming a first patterned photoresist layer on the seed layer, wherein a thickness of the first patterned photoresist layer is less than a thickness of the patterned metal layer; and performing a first patterning process to the seed layer through the first patterned photoresist layer to form a patterned seed layer, wherein after the first patterning process, the metal member includes a first part and a second part, the first part is disposed between the patterned seed layer and the second part, and a width of the first part is greater than a width of the second part.
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公开(公告)号:US20220087028A1
公开(公告)日:2022-03-17
申请号:US17486935
申请日:2021-09-28
Applicant: InnoLux Corporation
Inventor: Hsueh-Hsuan CHOU , Yi-Hung LIN
Abstract: A manufacturing method of a metal structure is disclosed, which includes the following steps: forming a seed layer on a substrate; forming a patterned metal layer on the seed layer, wherein the patterned metal layer includes a metal member; forming a first patterned photoresist layer on the seed layer, wherein a thickness of the first patterned photoresist layer is less than a thickness of the patterned metal layer; and performing a first patterning process to the seed layer through the first patterned photoresist layer to form a patterned seed layer, wherein after the first patterning process, the metal member includes a first part and a second part, the first part is disposed between the patterned seed layer and the second part, and a width of the first part is greater than a width of the second part.
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