Display device including hybrid types of transistors

    公开(公告)号:US10192898B2

    公开(公告)日:2019-01-29

    申请号:US15460331

    申请日:2017-03-16

    Inventor: Kuanfeng Lee

    Abstract: A display device includes a substrate; a gate insulating layer disposed on the substrate, a first gate electrode and a second gate electrode; a first active layer disposed on the gate insulating layer and comprising a polysilicon layer; a first insulating layer disposed on the first active layer and the gate insulating layer; a second active layer disposed on the first insulating layer and comprising a metal oxide layer; a first source electrode, a first drain electrode, a second source electrode and a second drain electrode, wherein the first source electrode and the first drain electrode are disposed on the first insulating layer and respectively electrically connect to the first active layer, and the second source electrode and the second drain electrode are disposed on the second active layer and electrically connect to the second active layer; and a display medium layer disposed on the substrate.

    Display device
    5.
    发明授权

    公开(公告)号:US10141387B2

    公开(公告)日:2018-11-27

    申请号:US15441329

    申请日:2017-02-24

    Abstract: A display device is disclosed, which includes: a substrate; a light emitting diode disposed above the substrate; a first transistor disposed above the substrate; and a second transistor disposed above the substrate. The first transistor includes: a first semiconductor layer; a first top gate electrode disposed above the first semiconductor layer; a first bottom gate electrode disposed under the first semiconductor layer; a first source electrode electrically connected to the first semiconductor layer; and a first drain electrode electrically connected to the first semiconductor layer, wherein the first drain electrode is electrically connected to the light emitting diode. In addition, the second transistor includes: a second semiconductor layer. Herein, one of the first semiconductor layer and the second semiconductor layer includes a first silicon semiconductor layer, and the other includes a first oxide semiconductor layer.

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