专利检索 ap:("Integrated Device Technology, Inc.") AND inv:"Mohsin Asif" 第 1 页

1.

发明申请
RF AMPLIFIER LINEARITY ENHANCEMENT WITH DYNAMICALLY ADJUSTED VARIABLE LOAD 审中-公开

公开(公告)号：US20190068121A1

公开(公告)日：2019-02-28

申请号：US15887013

申请日：2018-02-02

申请人： Integrated Device Technology, Inc.

发明人： Victor Korol , Roberto Aparicio Joo , Mohsin Asif , Shawn Bawell

IPC分类号： H03F1/02 , H03F3/19

CPC分类号： H03F1/0205 , H03F1/32 , H03F1/56 , H03F3/19 , H03F3/245 , H03F2200/211 , H03F2200/411 , H03F2200/451 , H04B1/18 , H04B1/38 , H04B1/48 , H04B2001/0408

摘要： An apparatus comprises an amplifier having a predefined linear range and a shunt load. The shunt load may be connected to an output, an input, or between gain stages of the amplifier. An impedance of the shunt load dynamically varies in response to a level of a signal presented at a node formed by interconnection of the shunt load and the amplifier, extending linearity of the amplifier beyond the predefined range.

2.

发明授权
RF amplifier linearity enhancement with dynamically adjusted variable load 有权

公开(公告)号：US10404216B2

公开(公告)日：2019-09-03

申请号：US15887013

申请日：2018-02-02

申请人： Integrated Device Technology, Inc.

发明人： Victor Korol , Roberto Aparicio Joo , Mohsin Asif , Shawn Bawell

IPC分类号： H03F1/02 , H03F3/19

摘要： An apparatus comprises an amplifier having a predefined linear range and a shunt load. The shunt load may be connected to an output, an input, or between gain stages of the amplifier. An impedance of the shunt load dynamically varies in response to a level of a signal presented at a node formed by interconnection of the shunt load and the amplifier, extending linearity of the amplifier beyond the predefined range.