公开(公告)号：US20210408289A1

公开(公告)日：2021-12-30

申请号：US16914145

申请日：2020-06-26

Applicant: Intel Corporation

Inventor： Biswajeet Guha ,  Brian Greene ,  Robin Chao ,  Adam Faust ,  Chung-Hsun Lin ,  Curtis Tsai ,  Kevin Fischer

IPC: H01L29/78 ,  H01L29/423 ,  H01L29/786 ,  H01L29/66

Abstract: A transistor structure includes a first channel layer over a second channel layer, where the first and the second channel layers include monocrystalline silicon. An epitaxial source material is coupled to a first end of the first and second channel layers. An epitaxial drain material is coupled to a second end of the first and second channel layers, a gate electrode is between the epitaxial source material and the epitaxial drain material, and around the first channel layer and around the second channel layer. The transistor structure further includes a first gate dielectric layer between the gate electrode and each of the first channel layer and the second channel layer, where the first gate dielectric layer has a first dielectric constant. A second gate dielectric layer is between the first gate dielectric layer and the gate electrode, where the second gate dielectric layer has a second dielectric constant.