公开(公告)号：US20210233908A1

公开(公告)日：2021-07-29

申请号：US17232010

申请日：2021-04-15

Applicant: Intel Corporation

Inventor： Mark T. BOHR ,  Stephen M. CEA ,  Barbara A. CHAPPELL

IPC: H01L27/088 ,  H01L21/8234 ,  H01L21/8238 ,  H01L27/092 ,  H01L27/12 ,  H01L21/84

Abstract: Through gate fin isolation for non-planar transistors in a microelectronic device, such as an integrated circuit (IC). In embodiments, ends of adjacent semiconductor fins are electrically isolated from each other with an isolation region that is self-aligned to gate electrodes of the semiconductor fins enabling higher transistor packing density and other benefits. In an embodiment, a single mask is employed to form a plurality of sacrificial placeholder stripes of a fixed pitch, a first subset of placeholder stripes is removed and isolation cuts made into the semiconductor fins in openings resulting from the first subset removal while a second subset of the placeholder stripes is replaced with gate electrodes.

公开(公告)号：US20240362391A1

公开(公告)日：2024-10-31

申请号：US18769148

申请日：2024-07-10

Applicant: Intel Corporation

Inventor： Ranjith KUMAR ,  Quan SHI ,  Mark T. BOHR ,  Andrew W. YEOH ,  Sourav CHAKRAVARTY ,  Barbara A. CHAPPELL ,  M. Clair WEBB

IPC: G06F30/392 ,  G06F30/20 ,  G06F30/337 ,  G06F30/347 ,  G06F30/373 ,  G06F30/3947 ,  H01L27/02 ,  H01L27/092 ,  H01L27/118

CPC classification number: G06F30/392 ,  G06F30/337 ,  G06F30/347 ,  H01L27/0207 ,  H01L27/0924 ,  H01L27/11807 ,  G06F30/20 ,  G06F30/373 ,  G06F30/3947 ,  H01L2027/11875

Abstract: Multi version library cell handling and integrated circuit structures fabricated therefrom are described. In an example, an integrated circuit structure includes a plurality of gate lines parallel along a first direction of a substrate and having a pitch along a second direction orthogonal to the first direction. A first version of a cell type is over a first portion of the plurality of gate lines, the first version of the cell type including a first plurality of interconnect lines having a second pitch along the second direction, the second pitch less than the first pitch.

公开(公告)号：US20220149075A1

公开(公告)日：2022-05-12

申请号：US17585101

申请日：2022-01-26

Applicant: Intel Corporation

Inventor： Ranjith KUMAR ,  Quan SHI ,  Mark T. BOHR ,  Andrew W. YEOH ,  Sourav CHAKRAVARTY ,  Barbara A. CHAPPELL ,  M. Clair WEBB

IPC: H01L27/118 ,  G06F30/392 ,  H01L27/02 ,  H01L27/092

Abstract: Multi version library cell handling and integrated circuit structures fabricated therefrom are described. In an example, an integrated circuit structure includes a plurality of gate lines parallel along a first direction of a substrate and having a pitch along a second direction orthogonal to the first direction. A first version of a cell type is over a first portion of the plurality of gate lines, the first version of the cell type including a first plurality of interconnect lines having a second pitch along the second direction, the second pitch less than the first pitch.