公开(公告)号：US11984317B2

公开(公告)日：2024-05-14

申请号：US17308813

申请日：2021-05-05

Applicant: Intel Corporation

Inventor： Marie Krysak ,  James Blackwell ,  Lauren Doyle ,  Brian Zaccheo ,  Patrick Theofanis ,  Michael Robinson ,  Florian Gstrein

IPC: H01L21/027 ,  G03F7/004 ,  G03F7/20 ,  H01L21/768 ,  H01L23/522

CPC classification number: H01L21/0274 ,  G03F7/0042 ,  H01L21/76877 ,  H01L23/5226 ,  G03F7/2004

Abstract: Techniques, structures, and materials related to extreme ultraviolet (EUV) lithography are discussed. Multiple patterning inclusive of first patterning a grating of parallel lines and second patterning utilizing EUV lithography to form plugs in the grating, and optional trimming of the plugs may be employed. EUV resists, surface treatments, resist additives, and optional processing inclusive of plug healing, angled etch processing, electric field enhanced post exposure bake are described, which provide improved processing reliability, feature definition, and critical dimensions.

公开(公告)号：US20210375616A1

公开(公告)日：2021-12-02

申请号：US17308813

申请日：2021-05-05

Applicant: Intel Corporation

Inventor： Marie Krysak ,  James Blackwell ,  Lauren Doyle ,  Brian Zaccheo ,  Patrick Theofanis ,  Michael Robinson ,  Florian Gstrein

IPC: H01L21/027 ,  G03F7/004 ,  H01L23/522 ,  H01L21/768

Abstract: Techniques, structures, and materials related to extreme ultraviolet (EUV) lithography are discussed. Multiple patterning inclusive of first patterning a grating of parallel lines and second patterning utilizing EUV lithography to form plugs in the grating, and optional trimming of the plugs may be employed. EUV resists, surface treatments, resist additives, and optional processing inclusive of plug healing, angled etch processing, electric field enhanced post exposure bake are described, which provide improved processing reliability, feature definition, and critical dimensions.