公开(公告)号：US12107040B2

公开(公告)日：2024-10-01

申请号：US17129858

申请日：2020-12-21

Applicant: Intel Corporation

Inventor： Aaron J. Welsh ,  Christopher M. Pelto ,  David J. Towner ,  Mark A. Blount ,  Takayoshi Ito ,  Dragos Seghete ,  Christopher R. Ryder ,  Stephanie F. Sundholm ,  Chamara Abeysekera ,  Anil W. Dey ,  Che-Yun Lin ,  Uygar E. Avci

IPC: H01L23/522 ,  H01L27/08 ,  H01L49/02

CPC classification number: H01L23/5223 ,  H01L28/60

Abstract: Metal insulator metal capacitors are described. In an example, a capacitor includes a first electrode plate, and a first capacitor dielectric on the first electrode plate. A second electrode plate is on the first capacitor dielectric and is over and parallel with the first electrode plate, and a second capacitor dielectric is on the second electrode plate. A third electrode plate is on the second capacitor dielectric and is over and parallel with the second electrode plate, and a third capacitor dielectric is on the third electrode plate. A fourth electrode plate is on the third capacitor dielectric and is over and parallel with the third electrode plate. In another example, a capacitor includes a first electrode, a capacitor dielectric on the first electrode, and a second electrode on the capacitor dielectric. The capacitor dielectric includes a plurality of alternating first dielectric layers and second dielectric layers.