公开(公告)号：US20240113106A1

公开(公告)日：2024-04-04

申请号：US17957106

申请日：2022-09-30

Applicant: Intel Corporation

Inventor： Sukru Yemenicioglu ,  Nikhil J. Mehta ,  Leonard P. Guler ,  Daniel J. Harris

IPC: H01L27/088 ,  H01L21/8234

CPC classification number: H01L27/088 ,  H01L21/823456 ,  H01L21/823481

Abstract: An integrated circuit includes laterally adjacent first and second devices. The first device includes (i) first source and drain regions, (ii) a first body including semiconductor material laterally extending between the first source and drain regions, (iii) a first sub-fin below the first body, and (iv) a first gate structure on the first body. The second device includes (i) second source and drain regions, (ii) a second body including semiconductor material laterally extending from the second source and drain regions, (iii) a second sub-fin below the second body, and (iv) a second gate structure on the second body. A second dielectric material is laterally between the first and second sub-fins. A third dielectric material is laterally between the first and second sub-fins, and above the second dielectric material. A gate cut including first dielectric material is laterally between the first and second gate structures, and above the third dielectric material.