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公开(公告)号:US20220100221A1
公开(公告)日:2022-03-31
申请号:US17033571
申请日:2020-09-25
Applicant: Intel Corporation
Inventor: You Li , David Duarte , Yongping Fan
Abstract: A low power hybrid reverse (LPHR) bandgap reference (BGR) and digital temperature sensor (DTS) or a digital thermometer, which utilizes subthreshold metal oxide semiconductor (MOS) transistor and the PNP parasitic Bi-polar Junction Transistor (BJT) device to form a reverse BGR that serves as the base for configurable BGR or DTS operating modes. The LPHR architecture uses low-cost MOS transistors and the standard parasitic PNP device. Based on a reverse bandgap voltage, the LPHR can work as a configurable BGR. By comparing the configurable BGR with the scaled base-emitter voltage, the circuit can also perform as a DTS with a linear transfer function with single-temperature trim for high accuracy.
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公开(公告)号:US12061493B2
公开(公告)日:2024-08-13
申请号:US17033571
申请日:2020-09-25
Applicant: Intel Corporation
Inventor: You Li , David Duarte , Yongping Fan
IPC: G05F3/30
CPC classification number: G05F3/30
Abstract: A low power hybrid reverse (LPHR) bandgap reference (BGR) and digital temperature sensor (DTS) or a digital thermometer, which utilizes subthreshold metal oxide semiconductor (MOS) transistor and the PNP parasitic Bi-polar Junction Transistor (BJT) device to form a reverse BGR that serves as the base for configurable BGR or DTS operating modes. The LPHR architecture uses low-cost MOS transistors and the standard parasitic PNP device. Based on a reverse bandgap voltage, the LPHR can work as a configurable BGR. By comparing the configurable BGR with the scaled base-emitter voltage, the circuit can also perform as a DTS with a linear transfer function with single-temperature trim for high accuracy.
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