公开(公告)号：US20230395718A1

公开(公告)日：2023-12-07

申请号：US17833050

申请日：2022-06-06

申请人： Intel Corporation

发明人： Willy Rachmady ,  Nitesh Kumar ,  Jami A. Wiedemer ,  Cheng-Ying Huang ,  Marko Radosavljevic ,  Mauro J. Kobrinsky ,  Patrick Morrow ,  Rohit Galatage ,  David N. Goldstein ,  Christopher J. Jezewski

IPC分类号： H01L29/78 ,  H01L29/423 ,  H01L29/45 ,  H01L29/06 ,  H01L27/092

CPC分类号： H01L29/7845 ,  H01L29/42392 ,  H01L27/092 ,  H01L29/0665 ,  H01L29/45

摘要： An integrated circuit structure includes a vertical stack including a first device, and a second device above the first device. The first device includes (i) a first source and first drain region, (ii) a first body laterally between the first source and drain regions, (iii) a first source contact including a first conductive material, and (iv) a first drain contact including the first conductive material. The second device includes (i) a second source and second drain region, (ii) a second body laterally between the second source and drain regions, (iii) a second source contact including a second conductive material, and (iv) a second drain contact including the second conductive material. In an example, the first and second conductive materials are compositionally different. In an example, the first conductive material induces compressive strain on the first body, and the second conductive material induces tensile strain on the second body.

公开(公告)号：US20230395717A1

公开(公告)日：2023-12-07

申请号：US17833045

申请日：2022-06-06

申请人： Intel Corporation

发明人： Willy Rachmady ,  Nitesh Kumar ,  Jami A. Wiedemer ,  Cheng-Ying Huang ,  Marko Radosavljevic ,  Mauro J. Kobrinsky ,  Patrick Morrow ,  Rohit Galatage ,  David N. Goldstein ,  Christopher J. Jezewski

IPC分类号： H01L29/78 ,  H01L29/423 ,  H01L29/06 ,  H01L29/45 ,  H01L27/092

CPC分类号： H01L29/7845 ,  H01L29/42392 ,  H01L29/0665 ,  H01L29/45 ,  H01L27/092

摘要： An integrated circuit structure includes a first device, and a second device laterally adjacent to the first device. The first device includes (i) a first source region, and a first source contact including a first conductive material, (ii) a first drain region, and a first drain contact including the first conductive material, and (iii) a first body laterally between the first source region and the first drain region. The second device includes (i) a second source region, and a second source contact including a second conductive material, (ii) a second drain region, and a second drain contact including the second conductive material, and (iii) a second body laterally between the second source region and the second drain region. The first and second conductive materials are compositionally different. The first conductive material induces compressive strain on the first body, and the second conductive material induces tensile strain on the second body.