公开(公告)号：US20230033086A1

公开(公告)日：2023-02-02

申请号：US17791175

申请日：2020-02-07

Applicant: Intel Corporation

Inventor： Chen WANG ,  Dipanjan BASU ,  Richard FASTOW ,  Dimitri KIOUSSIS ,  Yi LI ,  Ebony Lynn MAYS ,  Dimitrios PAVLOPOULOS ,  Junyen TEWG

IPC: H01L27/11556 ,  H01L27/11582 ,  H01L27/11524 ,  H01L27/1157 ,  G11C8/14

Abstract: A memory array including a varying width channel is disclosed. The array includes a plurality of WLs, which are above a layer, where the layer can be, for example, a Select Gate Source (SGS) of the memory array, or an isolation layer to isolate a first deck of the array from a second deck of the array. The channel extends through the plurality of word lines and at least partially through the layer. In an example, the channel comprises a first region and a second region. The first region of the channel has a first width that is at least 1 nm different from a second width of the second region of the channel. In an example, the first region extends through the plurality of word lines, and the second region extends through at least a part of the layer underneath the plurality of word lines. In one case, the first width is at least 1 nm less than a second width of the second region of the channel.