公开(公告)号：US20250098230A1

公开(公告)日：2025-03-20

申请号：US18370725

申请日：2023-09-20

Applicant: Intel Corporation

Inventor： Dan S. LAVRIC ,  Sean PURSEL ,  Dimitri KIOUSSIS ,  Lukas BAUMGARTEL ,  Mahdi AHMADI ,  Cortnie S. VOGELSBERG ,  Mengcheng LU ,  Omar Kyle HITE ,  Justin E. MUELLER ,  Lily Mao

IPC: H01L29/78 ,  H01L27/092 ,  H01L29/06 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775 ,  H01L29/786

Abstract: Integrated circuit structures having dual stress gates are described. For example, an integrated circuit structure includes a first vertical stack of horizontal nanowires, and a second vertical stack of nanowires laterally spaced apart from the first vertical stack of horizontal nanowires. An NMOS gate electrode is over the first vertical stack of horizontal nanowires, the NMOS gate electrode having a tensile layer extending from a top to a bottom of the first vertical stack of horizontal nanowires. A PMOS gate electrode is over the second vertical stack of horizontal nanowires, the PMOS gate electrode having a compressive layer extending from a top to a bottom of the second vertical stack of horizontal nanowires. The tensile layer of the NMOS gate electrode is not included in the PMOS gate electrode.

公开(公告)号：US20230033086A1

公开(公告)日：2023-02-02

申请号：US17791175

申请日：2020-02-07

Applicant: Intel Corporation

Inventor： Chen WANG ,  Dipanjan BASU ,  Richard FASTOW ,  Dimitri KIOUSSIS ,  Yi LI ,  Ebony Lynn MAYS ,  Dimitrios PAVLOPOULOS ,  Junyen TEWG

IPC: H01L27/11556 ,  H01L27/11582 ,  H01L27/11524 ,  H01L27/1157 ,  G11C8/14

Abstract: A memory array including a varying width channel is disclosed. The array includes a plurality of WLs, which are above a layer, where the layer can be, for example, a Select Gate Source (SGS) of the memory array, or an isolation layer to isolate a first deck of the array from a second deck of the array. The channel extends through the plurality of word lines and at least partially through the layer. In an example, the channel comprises a first region and a second region. The first region of the channel has a first width that is at least 1 nm different from a second width of the second region of the channel. In an example, the first region extends through the plurality of word lines, and the second region extends through at least a part of the layer underneath the plurality of word lines. In one case, the first width is at least 1 nm less than a second width of the second region of the channel.