公开(公告)号：US20220415807A1

公开(公告)日：2022-12-29

申请号：US17358971

申请日：2021-06-25

Applicant: Intel Corporation

Inventor： Chytra Pawashe ,  Lei Jiang ,  Colin Landon ,  Daniel Pantuso ,  Edwin Ramayya ,  Jeffrey Hicks ,  Mehmet Koker Aykol

IPC: H01L23/538 ,  H01L23/36

Abstract: A device structure includes a first interconnect layer, a second interconnect layer, a device layer including a comprising a plurality of devices, where the device layer is between the first interconnect layer and the second interconnect layer. The device structure further includes a dielectric layer adjacent the second interconnect layer, where the dielectric layer includes one or more of metallic dopants or a plurality of metal structures, wherein the plurality of metal structures is electrically isolated from interconnect structures but in contact with a dielectric material of the second interconnect layer, and where the individual ones of the plurality of metal structures is above a region including at least some of the plurality of devices. The device structure further includes a substrate adjacent to the dielectric layer and a heat sink coupled with the substrate.