公开(公告)号：US20230317612A1

公开(公告)日：2023-10-05

申请号：US17710867

申请日：2022-03-31

Applicant: Intel Corporation

Inventor： Clifford ONG ,  Zheng GUO ,  Eirc A. KARL ,  Smita SHRIDHARAN ,  Mauro J. KOBRINSKY ,  Shem O. OGADHOH ,  Clifford J. ENGEL ,  Charles H. WALLACE ,  Leonard P. GULER

IPC: H01L23/528 ,  H01L27/11 ,  H01L23/522

CPC classification number: H01L23/5286 ,  H01L27/1104 ,  H01L27/092 ,  H01L23/5283 ,  H01L23/5226 ,  H01L27/1108

Abstract: Embodiments described herein may be related to apparatuses, processes, systems, and techniques directed to electrical couplings between epitaxial structures and voltage sources within transistors in SRAM bit cells. Embodiments include direct electrical couplings between a backside contact metal (BMO) and a backside of an epitaxial structure to provide SRAM VCC voltage (SVCC) voltage, as well as electrical connection structures that electrically couple the BMO to a front side of an epitaxial structure to provide SVCC voltage. Other embodiments may be described and/or claimed.