公开(公告)号：US20210074703A1

公开(公告)日：2021-03-11

申请号：US16772101

申请日：2018-03-22

Applicant: Intel Corporation

Inventor： Cory E. WEBER ,  Haorld W. KENNEL ,  Willy RACHMADY ,  Gilbert DEWEY

IPC: H01L27/092 ,  H01L27/12 ,  H01L21/8258

Abstract: Semiconductor nanowire devices having (111)-plane channel sidewalls and methods of fabricating semiconductor nanowire devices having (111)-plane channel sidewalls are described. For example, an integrated circuit structure includes a first semiconductor device including a plurality of vertically stacked nanowires disposed above a substrate, each of the nanowires comprising a discrete channel region having lateral sidewalls along a carrier transport direction. The integrated circuit structure also includes a second semiconductor device including a semiconductor fin disposed above the substrate, the semiconductor fin having a channel region with a top and side surfaces, the channel region having lateral sidewalls along a carrier transport direction.