SEMICONDUCTOR NANOWIRE DEVICE HAVING (111)-PLANE CHANNEL SIDEWALLS

    公开(公告)号:US20210074703A1

    公开(公告)日:2021-03-11

    申请号:US16772101

    申请日:2018-03-22

    Abstract: Semiconductor nanowire devices having (111)-plane channel sidewalls and methods of fabricating semiconductor nanowire devices having (111)-plane channel sidewalls are described. For example, an integrated circuit structure includes a first semiconductor device including a plurality of vertically stacked nanowires disposed above a substrate, each of the nanowires comprising a discrete channel region having lateral sidewalls along a carrier transport direction. The integrated circuit structure also includes a second semiconductor device including a semiconductor fin disposed above the substrate, the semiconductor fin having a channel region with a top and side surfaces, the channel region having lateral sidewalls along a carrier transport direction.

    SEMICONDUCTOR NANOWIRE DEVICE HAVING (111)-PLANE CHANNEL SIDEWALLS

    公开(公告)号:US20220310600A1

    公开(公告)日:2022-09-29

    申请号:US17842450

    申请日:2022-06-16

    Abstract: Semiconductor nanowire devices having (111)-plane channel sidewalls and methods of fabricating semiconductor nanowire devices having (111)-plane channel sidewalls are described. For example, an integrated circuit structure includes a first semiconductor device including a plurality of vertically stacked nanowires disposed above a substrate, each of the nanowires comprising a discrete channel region having lateral sidewalls along a carrier transport direction. The integrated circuit structure also includes a second semiconductor device including a semiconductor fin disposed above the substrate, the semiconductor fin having a channel region with a top and side surfaces, the channel region having lateral sidewalls along a carrier transport direction.

    BACKSIDE FIN RECESS CONTROL WITH MULTI-HSI OPTION

    公开(公告)号:US20190027503A1

    公开(公告)日:2019-01-24

    申请号:US15752241

    申请日:2015-09-25

    Abstract: Embodiments of the present invention are directed to formation of fins with different active channel heights in a tri-gate or a Fin-FET device. In an embodiment, at least two fins are formed on a front side of the substrate. A gate structure extends over a top surface and a pair of sidewalls of at least a portion of the fins. In an embodiment, the substrate is thinned to expose the bottom surface of the fins. Next, backside etching may be performed on each fin to form active channel regions. The fins may be recessed to different depths, forming active channel regions with differing heights.

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