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公开(公告)号:US20210074703A1
公开(公告)日:2021-03-11
申请号:US16772101
申请日:2018-03-22
Applicant: Intel Corporation
Inventor: Cory E. WEBER , Haorld W. KENNEL , Willy RACHMADY , Gilbert DEWEY
IPC: H01L27/092 , H01L27/12 , H01L21/8258
Abstract: Semiconductor nanowire devices having (111)-plane channel sidewalls and methods of fabricating semiconductor nanowire devices having (111)-plane channel sidewalls are described. For example, an integrated circuit structure includes a first semiconductor device including a plurality of vertically stacked nanowires disposed above a substrate, each of the nanowires comprising a discrete channel region having lateral sidewalls along a carrier transport direction. The integrated circuit structure also includes a second semiconductor device including a semiconductor fin disposed above the substrate, the semiconductor fin having a channel region with a top and side surfaces, the channel region having lateral sidewalls along a carrier transport direction.
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2.
公开(公告)号:US20180204932A1
公开(公告)日:2018-07-19
申请号:US15570965
申请日:2015-06-17
Applicant: Intel Corporation
Inventor: Rishabh MEHANDRU , Partick MORROW , Ranjith KUMAR , Cory E. WEBER , Seiyon KIM , Stephen M. CEA , Tahir GHANI
IPC: H01L29/66 , H01L29/78 , H01L21/822 , H01L21/8238 , H01L21/8234 , H01L21/84 , H01L27/06 , H01L27/12 , H01L27/108
CPC classification number: H01L29/66795 , H01L21/8221 , H01L21/823431 , H01L21/823821 , H01L21/845 , H01L27/0688 , H01L27/10826 , H01L27/1104 , H01L27/1211 , H01L29/78 , H01L29/785
Abstract: Vertical integration schemes and circuit elements architectures for area scaling of semiconductor devices are described. In an example, an inverter structure includes a semiconductor fin separated vertically into an upper region and a lower region. A first plurality of gate structures is included for controlling the upper region of the semiconductor fin. A second plurality of gate structures is included for controlling the lower region of the semiconductor fin. The second plurality of gate structures has a conductivity type opposite the conductivity type of the first plurality of gate structures.
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3.
公开(公告)号:US20180248005A1
公开(公告)日:2018-08-30
申请号:US15774952
申请日:2015-12-23
Applicant: Intel Corporation
Inventor: Aaron D. LILAK , Stephen M. CEA , Rishabh MEHANDRU , Cory E. WEBER
IPC: H01L29/10 , H01L29/167 , H01L29/78 , H01L21/304 , H01L21/306 , H01L21/265 , H01L21/324 , H01L29/66
CPC classification number: H01L29/1083 , H01L21/26513 , H01L21/26566 , H01L21/304 , H01L21/30625 , H01L21/324 , H01L29/167 , H01L29/66795 , H01L29/785 , H01L29/7851
Abstract: Methods for doping a sub-fin region of a semiconductor structure include providing a semiconductor structure that comprises a substrate and a plurality of fins formed on the substrate, the plurality of fins having sub-fin regions adjacent to the substrate; removing the substrate to expose a portion of the sub-fin regions of the plurality of fins, and implanting a dopant material into the exposed portion of the sub-fin region. The method may also include performing an annealing process after the implantation such that the dopant becomes electrically active. The method may also include patterning the backside of the semiconductor structure. Devices constructed using the disclosed methods are also provided, and other embodiments are discussed.
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公开(公告)号:US20200176482A1
公开(公告)日:2020-06-04
申请号:US16785986
申请日:2020-02-10
Applicant: Intel Corporation
Inventor: Aaron D. LILAK , Patrick MORROW , Stephen M. CEA , Rishabh MEHANDRU , Cory E. WEBER
IPC: H01L27/12 , H01L29/78 , H01L21/265 , H01L29/66 , H01L21/8234 , H01L27/088 , H01L21/3115 , H01L21/84
Abstract: Embodiments of the present invention are directed to formation of fins with different active channel heights in a tri-gate or a Fin-FET device. In an embodiment, at least two fins are formed on a front side of the substrate. A gate structure extends over a top surface and a pair of sidewalls of at least a portion of the fins. In an embodiment, the substrate is thinned to expose the bottom surface of the fins. Next, backside etching may be performed on each fin to form active channel regions. The fins may be recessed to different depths, forming active channel regions with differing heights.
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公开(公告)号:US20200035818A1
公开(公告)日:2020-01-30
申请号:US16592380
申请日:2019-10-03
Applicant: Intel Corporation
Inventor: Stephen M. CEA , Cory E. WEBER , Patrick H. KEYS , Seiyon KIM , Michael G. HAVERTY , Sadasivan SHANKAR
IPC: H01L29/775 , B82Y10/00 , H01L29/06 , H01L29/66 , H01L29/417 , H01L29/786 , H01L29/78
Abstract: Nanowire structures having wrap-around contacts are described. For example, a nanowire semiconductor device includes a nanowire disposed above a substrate. A channel region is disposed in the nanowire. The channel region has a length and a perimeter orthogonal to the length. A gate electrode stack surrounds the entire perimeter of the channel region. A pair of source and drain regions is disposed in the nanowire, on either side of the channel region. Each of the source and drain regions has a perimeter orthogonal to the length of the channel region. A first contact completely surrounds the perimeter of the source region. A second contact completely surrounds the perimeter of the drain region.
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公开(公告)号:US20220310600A1
公开(公告)日:2022-09-29
申请号:US17842450
申请日:2022-06-16
Applicant: Intel Corporation
Inventor: Cory E. WEBER , Harold W. KENNEL , Willy RACHMADY , Gilbert DEWEY
IPC: H01L27/092 , H01L21/8258 , H01L27/12 , H01L21/02 , H01L29/78 , H01L29/06 , H01L21/8238
Abstract: Semiconductor nanowire devices having (111)-plane channel sidewalls and methods of fabricating semiconductor nanowire devices having (111)-plane channel sidewalls are described. For example, an integrated circuit structure includes a first semiconductor device including a plurality of vertically stacked nanowires disposed above a substrate, each of the nanowires comprising a discrete channel region having lateral sidewalls along a carrier transport direction. The integrated circuit structure also includes a second semiconductor device including a semiconductor fin disposed above the substrate, the semiconductor fin having a channel region with a top and side surfaces, the channel region having lateral sidewalls along a carrier transport direction.
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公开(公告)号:US20190027503A1
公开(公告)日:2019-01-24
申请号:US15752241
申请日:2015-09-25
Applicant: Intel Corporation
Inventor: Aaron D. LILAK , Patrick MORROW , Stephen M. CEA , Rishabh MEHANDRU , Cory E. WEBER
IPC: H01L27/12 , H01L21/84 , H01L21/265 , H01L21/3115
Abstract: Embodiments of the present invention are directed to formation of fins with different active channel heights in a tri-gate or a Fin-FET device. In an embodiment, at least two fins are formed on a front side of the substrate. A gate structure extends over a top surface and a pair of sidewalls of at least a portion of the fins. In an embodiment, the substrate is thinned to expose the bottom surface of the fins. Next, backside etching may be performed on each fin to form active channel regions. The fins may be recessed to different depths, forming active channel regions with differing heights.
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公开(公告)号:US20230046755A1
公开(公告)日:2023-02-16
申请号:US17978038
申请日:2022-10-31
Applicant: Intel Corporation
Inventor: Rishabh MEHANDRU , Patrick MORROW , Ranjith KUMAR , Cory E. WEBER , Seiyon KIM , Stephen M. CEA , Tahir GHANI
IPC: H01L29/66 , H01L29/78 , H01L21/822 , H01L21/8238 , H01L27/06 , H01L27/11 , H01L21/8234 , H01L21/84 , H01L27/108 , H01L27/12
Abstract: Vertical integration schemes and circuit elements architectures for area scaling of semiconductor devices are described. In an example, an inverter structure includes a semiconductor fin separated vertically into an upper region and a lower region. A first plurality of gate structures is included for controlling the upper region of the semiconductor fin. A second plurality of gate structures is included for controlling the lower region of the semiconductor fin. The second plurality of gate structures has a conductivity type opposite the conductivity type of the first plurality of gate structures.
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公开(公告)号:US20210043755A1
公开(公告)日:2021-02-11
申请号:US17080458
申请日:2020-10-26
Applicant: Intel Corporation
Inventor: Rishabh MEHANDRU , Patrick MORROW , Ranjith KUMAR , Cory E. WEBER , Seiyon KIM , Stephen M. CEA , Tahir GHANI
IPC: H01L29/66 , H01L29/78 , H01L27/12 , H01L21/84 , H01L27/108 , H01L21/8234 , H01L21/822 , H01L21/8238 , H01L27/06 , H01L27/11 , H01L29/778
Abstract: Vertical integration schemes and circuit elements architectures for area scaling of semiconductor devices are described. In an example, an inverter structure includes a semiconductor fin separated vertically into an upper region and a lower region. A first plurality of gate structures is included for controlling the upper region of the semiconductor fin. A second plurality of gate structures is included for controlling the lower region of the semiconductor fin. The second plurality of gate structures has a conductivity type opposite the conductivity type of the first plurality of gate structures.
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公开(公告)号:US20210036137A1
公开(公告)日:2021-02-04
申请号:US17072992
申请日:2020-10-16
Applicant: Intel Corporation
Inventor: Stephen M. CEA , Cory E. WEBER , Patrick H. KEYS , Seiyon KIM , Michael G. HAVERTY , Sadasivan SHANKAR
IPC: H01L29/775 , H01L29/66 , B82Y10/00 , H01L29/06 , H01L29/417 , H01L29/786 , H01L29/78
Abstract: Nanowire structures having wrap-around contacts are described. For example, a nanowire semiconductor device includes a nanowire disposed above a substrate. A channel region is disposed in the nanowire. The channel region has a length and a perimeter orthogonal to the length. A gate electrode stack surrounds the entire perimeter of the channel region. A pair of source and drain regions is disposed in the nanowire, on either side of the channel region. Each of the source and drain regions has a perimeter orthogonal to the length of the channel region. A first contact completely surrounds the perimeter of the source region. A second contact completely surrounds the perimeter of the drain region.
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