公开(公告)号：US10825831B1

公开(公告)日：2020-11-03

申请号：US16457694

申请日：2019-06-28

Applicant: Intel Corporation

Inventor： Randy J. Koval ,  Henok T. Mebrahtu ,  Krishna K. Parat

IPC: H01L27/115 ,  H01L29/40 ,  H01L21/02 ,  H01L21/32 ,  H01L27/11582 ,  H01L29/423 ,  H01L27/11556 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/28

Abstract: Storage node configurations are described. A storage node (e.g., a floating gate or a charge trap layer of a three-dimensional (3D) NAND flash device) include a channel-facing surface with a radius of curvature. For example, a channel-facing surface of the storage node may be concave. A control gate-facing surface of the storage node may instead, or additionally, also include a radius of curvature. The radius of curvature of the channel-facing and/or control gate-facing surfaces of the storage node is less than or equal to the radius of the channel layer.