High frequency capacitor with inductance cancellation

    公开(公告)号:US11552030B2

    公开(公告)日:2023-01-10

    申请号:US16051376

    申请日:2018-07-31

    Abstract: An integrated circuit structure includes a first metallization layer with first and second electrodes, each of which has electrode fingers. A second metallization layer may be included below the first metallization layer and include one or more electrodes with electrode fingers. The integrated circuit structure is configured to exhibit at least partial vertical inductance cancellation when the first electrode and second electrode are energized. The integrated circuit structure can be configured to also exhibit horizontal inductance cancellation between adjacent electrode fingers. Also disclosed is a simulation model that includes a capacitor model that models capacitance between electrode fingers having a finger length and includes at least one resistor-capacitor series circuit in which a resistance of the resistor increases with decreasing finger length for at least some values of the finger length.

    Compound capacitor structures
    2.
    发明授权

    公开(公告)号:US11380755B2

    公开(公告)日:2022-07-05

    申请号:US16650826

    申请日:2017-12-18

    Abstract: Capacitors are disclosed. A capacitor includes a plate-to-plate capacitor and a finger-to-finger capacitor. The plate-to-plate capacitor includes at least a first plate and a second plate. The second plate is in proximity to the first plate. The finger to finger capacitor is in proximity to the first plate. The finger to finger capacitor includes a first plurality of finger elements and a second plurality of finger elements. The second plurality of finger elements is interleaved with the first plurality of finger elements. The first plurality of finger elements is electrically connected to the first plate and the second plurality of finger elements is electrically connected to the second plate. The second plurality of finger elements and the first plate form additional plate-to-plate capacitors.

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