公开(公告)号：US11545586B2

公开(公告)日：2023-01-03

申请号：US16643929

申请日：2017-09-29

Applicant: INTEL CORPORATION

Inventor： Harald Gossner ,  Peter Baumgartner ,  Uwe Hodel ,  Domagoj Siprak ,  Stephan Leuschner ,  Richard Geiger ,  Han Wui Then ,  Marko Radosavljevic ,  Sansaptak Dasgupta

IPC: H01L29/872 ,  H01L29/20 ,  H01L29/66 ,  H01L29/205

Abstract: A Group III-Nitride (III-N) device structure is provided which comprises: a heterostructure having three or more layers comprising III-N material, an anode within a recess that extends through two or more of the layers, wherein the anode is in electrical contact with the first layer, a cathode comprising donor dopants, wherein the cathode is on the first layer of the heterostructure; and a conducting region in the first layer in direct contact to the cathode and conductively connected to the anode. Other embodiments are also disclosed and claimed.

公开(公告)号：US11373995B2

公开(公告)日：2022-06-28

申请号：US16643928

申请日：2017-09-29

Applicant: INTEL CORPORATION

Inventor： Harald Gossner ,  Peter Baumgartner ,  Uwe Hodel ,  Domagoj Siprak ,  Stephan Leuschner ,  Richard Geiger ,  Han Wui Then ,  Marko Radosavljevic ,  Sansaptak Dasgupta

IPC: H01L29/778 ,  H01L27/02 ,  H01L21/8252 ,  H01L27/06 ,  H01L29/20 ,  H01L29/205 ,  H01L29/47 ,  H01L29/66 ,  H01L29/872 ,  H01L27/07

Abstract: A Group III-Nitride (III-N) device structure is presented comprising: a heterostructure having three or more layers comprising III-N material, a cathode comprising donor dopants, wherein the cathode is on a first layer of the heterostructure,
an anode within a recess that extends through two or more of the layers of the heterostructure, wherein the anode comprises a first region wherein the anode is separated from the heterostructure by a high k dielectric material, and a second region wherein the anode is in direct contact with the heterostructure, and a conducting region in the first layer in direct contact to the cathode and conductively connected to the anode. Other embodiments are also disclosed and claimed.

公开(公告)号：US11424354B2

公开(公告)日：2022-08-23

申请号：US16642867

申请日：2017-09-29

Applicant: Intel Corporation

Inventor： Harald Gossner ,  Peter Baumgartner ,  Uwe Hodel ,  Domagoj Siprak ,  Stephan Leuschner ,  Richard Geiger

IPC: H01L29/778 ,  H01L29/66 ,  H01L29/20

Abstract: A Group III-Nitride (III-N) device structure is provided comprising: a heterostructure having three or more layers comprising III-N material, an anode n+ region and a cathode comprising donor dopants, wherein the anode n+ region and the cathode are on the first layer of the heterostructure and wherein the anode n+ region and the cathode extend beyond the heterostructure, and an anode metal region within a recess that extends through two or more of the layers, wherein the anode metal region is in electrical contact with the first layer, wherein the anode metal region comprises a first width within the recess and a second width beyond the recess, and wherein the anode metal region is coupled with the anode n+ region. Other embodiments are also disclosed and claimed.

公开(公告)号：US11552030B2

公开(公告)日：2023-01-10

申请号：US16051376

申请日：2018-07-31

Applicant: INTEL CORPORATION

Inventor： Daniel Sira ,  Domagoj Siprak ,  Jonas Fritzin

IPC: H01L23/522 ,  H01L23/66 ,  H01L49/02 ,  H01L27/06 ,  H01L23/482 ,  G06F30/367

Abstract: An integrated circuit structure includes a first metallization layer with first and second electrodes, each of which has electrode fingers. A second metallization layer may be included below the first metallization layer and include one or more electrodes with electrode fingers. The integrated circuit structure is configured to exhibit at least partial vertical inductance cancellation when the first electrode and second electrode are energized. The integrated circuit structure can be configured to also exhibit horizontal inductance cancellation between adjacent electrode fingers. Also disclosed is a simulation model that includes a capacitor model that models capacitance between electrode fingers having a finger length and includes at least one resistor-capacitor series circuit in which a resistance of the resistor increases with decreasing finger length for at least some values of the finger length.

公开(公告)号：US11380755B2

公开(公告)日：2022-07-05

申请号：US16650826

申请日：2017-12-18

Applicant: Intel Corporation

Inventor： Domagoj Siprak ,  Jonas Fritzin ,  Sundaravadanan Anantha Krishnan

IPC: H01L49/02 ,  H01L23/66 ,  H01P3/02 ,  H01L23/522

Abstract: Capacitors are disclosed. A capacitor includes a plate-to-plate capacitor and a finger-to-finger capacitor. The plate-to-plate capacitor includes at least a first plate and a second plate. The second plate is in proximity to the first plate. The finger to finger capacitor is in proximity to the first plate. The finger to finger capacitor includes a first plurality of finger elements and a second plurality of finger elements. The second plurality of finger elements is interleaved with the first plurality of finger elements. The first plurality of finger elements is electrically connected to the first plate and the second plurality of finger elements is electrically connected to the second plate. The second plurality of finger elements and the first plate form additional plate-to-plate capacitors.

公开(公告)号：US11641644B2

公开(公告)日：2023-05-02

申请号：US16830423

申请日：2020-03-26

Applicant: Intel Corporation

Inventor： Biljana Badic ,  Steven A. Bowers ,  Yang-Seok Choi ,  Miltiadis Filippou ,  Bertram Gunzelmann ,  Nageen Himayat ,  Ingolf Karls ,  Nirlesh Kumar Koshta ,  Rajkumar Krishnaperumal ,  Markus Dominik Mueck ,  Hosein Nikopour ,  Pradeep C Pangi ,  Jerome Parron ,  Bernhard Raaf ,  Sabine Roessel ,  Dario Sabella ,  Bernd Schaller ,  Domagoj Siprak ,  Christopher Stobart ,  Shashanka Totadamane Ramappa ,  Sudeep Manithara Vamanan ,  Zhibin Yu ,  Jing Zhu

IPC: H04W72/12 ,  H04B17/318 ,  H04W76/10 ,  H04W4/02 ,  H04W16/32 ,  H04W52/02

Abstract: A central trajectory controller including a cell interface configured to establish signaling connections with one or more backhaul moving cells and to establish signaling connections with one or more outer moving cells, an input data repository configured to obtain input data related to a radio environment of the one or more outer moving cells and the one or more backhaul moving cells, and a trajectory processor configured to determine, based on the input data, first coarse trajectories for the one or more backhaul moving cells and second coarse trajectories for the one or more outer moving cells, the cell interface further configured to send the first coarse trajectories to the one or more backhaul moving cells and to send the second coarse trajectories to the one or more outer moving cells.

公开(公告)号：US20220320350A1

公开(公告)日：2022-10-06

申请号：US17848275

申请日：2022-06-23

Applicant: Intel Corporation

Inventor： Harald Gossner ,  Peter Baumgartner ,  Uwe Hodel ,  Domagoj Siprak ,  Stephan Leuschner ,  Richard Geiger ,  Han Wui Then ,  Marko Radosavljevic ,  Sansaptak Dasgupta

IPC: H01L29/93 ,  H01L29/06 ,  H01L29/20 ,  H01L29/778

Abstract: A variable capacitance III-N device having multiple two-dimensional electron gas (2DEG) layers are described. In some embodiments, the device comprises a first source and a first drain; a first polarization layer adjacent to the first source and the first drain; a first channel layer coupled to the first source and the first drain and adjacent to the first polarization layer, the first channel layer comprising a first 2DEG region; a second source and a second drain; a second polarization layer adjacent to the second source and the second drain; and a second channel layer coupled to the second source and the second drain and adjacent to the second polarization layer, the second channel layer comprising a second 2DEG region, wherein the second channel layer is over the first polarization layer.

公开(公告)号：US12034085B2

公开(公告)日：2024-07-09

申请号：US17848275

申请日：2022-06-23

Applicant: Intel Corporation

Inventor： Harald Gossner ,  Peter Baumgartner ,  Uwe Hodel ,  Domagoj Siprak ,  Stephan Leuschner ,  Richard Geiger ,  Han Wui Then ,  Marko Radosavljevic ,  Sansaptak Dasgupta

IPC: H01L29/66 ,  H01L29/06 ,  H01L29/20 ,  H01L29/778 ,  H01L29/93

CPC classification number: H01L29/93 ,  H01L29/0649 ,  H01L29/2003 ,  H01L29/778

Abstract: A variable capacitance III-N device having multiple two-dimensional electron gas (2DEG) layers are described. In some embodiments, the device comprises a first source and a first drain; a first polarization layer adjacent to the first source and the first drain; a first channel layer coupled to the first source and the first drain and adjacent to the first polarization layer, the first channel layer comprising a first 2DEG region; a second source and a second drain; a second polarization layer adjacent to the second source and the second drain; and a second channel layer coupled to the second source and the second drain and adjacent to the second polarization layer, the second channel layer comprising a second 2DEG region, wherein the second channel layer is over the first polarization layer.

公开(公告)号：US11380806B2

公开(公告)日：2022-07-05

申请号：US16641222

申请日：2017-09-28

Applicant: INTEL CORPORATION

Inventor： Harald Gossner ,  Peter Baumgartner ,  Uwe Hodel ,  Domagoj Siprak ,  Stephan Leuschner ,  Richard Geiger ,  Han Wui Then ,  Marko Radosavljevic ,  Sansaptak Dasgupta

IPC: H01L29/93 ,  H01L29/06 ,  H01L29/20 ,  H01L29/778

Abstract: A variable capacitance III-N device having multiple two-dimensional electron gas (2DEG) layers are described. In some embodiments, the device comprises a first source and a first drain; a first polarization layer adjacent to the first source and the first drain; a first channel layer coupled to the first source and the first drain and adjacent to the first polarization layer, the first channel layer comprising a first 2DEG region; a second source and a second drain; a second polarization layer adjacent to the second source and the second drain; and a second channel layer coupled to the second source and the second drain and adjacent to the second polarization layer, the second channel layer comprising a second 2DEG region, wherein the second channel layer is over the first polarization layer.

公开(公告)号：US20200220030A1

公开(公告)日：2020-07-09

申请号：US16641222

申请日：2017-09-28

Applicant: INTEL CORPORATION

Inventor： Harald Gossner ,  Peter Baumgartner ,  Uwe Hodel ,  Domagoj Siprak ,  Stephan Leuschner ,  Richard Geiger ,  Han Wui Then ,  Marko Radosavljevic ,  Sansaptak Dasgupta

IPC: H01L29/93 ,  H01L29/20 ,  H01L29/06 ,  H01L29/778

Abstract: A variable capacitance III-N device having multiple two-dimensional electron gas (2DEG) layers are described. In some embodiments, the device comprises a first source and a first drain; a first polarization layer adjacent to the first source and the first drain; a first channel layer coupled to the first source and the first drain and adjacent to the first polarization layer, the first channel layer comprising a first 2DEG region; a second source and a second drain; a second polarization layer adjacent to the second source and the second drain; and a second channel layer coupled to the second source and the second drain and adjacent to the second polarization layer, the second channel layer comprising a second 2DEG region, wherein the second channel layer is over the first polarization layer.