公开(公告)号：US20220406773A1

公开(公告)日：2022-12-22

申请号：US17353275

申请日：2021-06-21

Applicant: Intel Corporation

Inventor： Leonard P. GULER ,  Sukru YEMENICIOGLU ,  Kalyan C. KOLLURU ,  Mauro J. KOBRINSKY ,  Charles H. WALLACE ,  Tahir GHANI

IPC: H01L27/088 ,  H01L29/06 ,  H01L29/423 ,  H01L29/66 ,  H01L23/48 ,  H01L21/8234

Abstract: Integrated circuit structures having backside self-aligned conductive pass-through contacts, and methods of fabricating integrated circuit structures having backside self-aligned conductive pass-through contacts, are described. For example, an integrated circuit structure includes a first sub-fin structure over a first stack of nanowires. A second sub-fin structure is over a second stack of nanowires. A dummy gate electrode is laterally between the first stack of nanowires and the second stack of nanowires. A conductive pass-through contact is laterally between the first stack of nanowires and the second stack of nanowires. The conductive pass-through contact is on and in contact with the dummy gate electrode.