公开(公告)号：US09997207B2

公开(公告)日：2018-06-12

申请号：US15005194

申请日：2016-01-25

Applicant: Intel Corporation

Inventor： Matthew G. Dayley ,  Yadhu Vamshi S. Vancha

IPC: G11C5/14 ,  G05F3/08 ,  G11C7/14 ,  G11C27/02 ,  G05F3/26 ,  G11C7/10

CPC classification number: G11C5/147 ,  G05F3/08 ,  G05F3/26 ,  G11C7/10 ,  G11C7/14 ,  G11C27/02 ,  G11C27/024

Abstract: A highly distributed current reference for a solid-state memory comprises a centrally located current digital-to-analog converter (IDAC) and a plurality of remotely located tile current references. The IDAC comprises a first active device that generates a reference current, and a device that forms a first source degeneration resistance for the first active device. The IDAC outputs a voltage signal that represents a magnitude of the reference current. A remotely located tile current reference comprises a second active device and a device that forms a second source degeneration resistance for the second active device. The source degeneration resistances and capacitance coupled to the voltage signal output from the IDAC compensate for current, temperature, supply and process variations.

公开(公告)号：US10553257B2

公开(公告)日：2020-02-04

申请号：US16001396

申请日：2018-06-06

Applicant: Intel Corporation

Inventor： Matthew G. Dayley ,  Yadhu Vamshi S. Vancha

IPC: G11C5/14 ,  G05F3/08 ,  G11C7/14 ,  G11C27/02 ,  G05F3/26 ,  G11C7/10

Abstract: A highly distributed current reference for a solid-state memory comprises a centrally located current digital-to-analog converter (IDAC) and a plurality of remotely located tile current references. The IDAC comprises a first active device that generates a reference current, and a device that forms a first source degeneration resistance for the first active device. The IDAC outputs a voltage signal that represents a magnitude of the reference current. A remotely located tile current reference comprises a second active device and a device that forms a second source degeneration resistance for the second active device. The source degeneration resistances and capacitance coupled to the voltage signal output from the IDAC compensate for current, temperature, supply and process variations.

公开(公告)号：US20190006993A1

公开(公告)日：2019-01-03

申请号：US15640218

申请日：2017-06-30

Applicant: Intel Corporation

Inventor： Dhruval J. Patel ,  Liyao Miao ,  Matthew G. Dayley

IPC: H03F1/02 ,  H02M3/04

Abstract: Technology for a system operable to regulate an output voltage is described. The system can include an active amplifier configured to amplify an input voltage to produce the output voltage when there is active current consumption at the output voltage of the system. The system can include a standby amplifier configured to switch between amplifying the input voltage for a defined period of time and not amplifying the input voltage for a defined period of time to maintain a desired value for the output voltage of the system.

公开(公告)号：US20160254035A1

公开(公告)日：2016-09-01

申请号：US15005194

申请日：2016-01-25

Applicant: Intel Corporation

Inventor： Matthew G. Dayley ,  Yadhu Vamshi S. Vancha

IPC: G11C5/14 ,  G11C7/10 ,  G05F3/26

CPC classification number: G11C5/147 ,  G05F3/08 ,  G05F3/26 ,  G11C7/10 ,  G11C7/14 ,  G11C27/02 ,  G11C27/024

Abstract: A highly distributed current reference for a solid-state memory comprises a centrally located current digital-to-analog converter (IDAC) and a plurality of remotely located tile current references. The IDAC comprises a first active device that generates a reference current, and a device that forms a first source degeneration resistance for the first active device. The IDAC outputs a voltage signal that represents a magnitude of the reference current. A remotely located tile current reference comprises a second active device and a device that forms a second source degeneration resistance for the second active device. The source degeneration resistances and capacitance coupled to the voltage signal output from the IDAC compensate for current, temperature, supply and process variations.

Abstract translation: 用于固态存储器的高分布式电流参考包括位于中心的当前数模转换器（IDAC）和多个远程定位的瓦片电流参考。 IDAC包括产生参考电流的第一有源器件和形成第一有源器件的第一源极退变电阻的器件。 IDAC输出表示参考电流大小的电压信号。 远程定位的瓦片电流参考包括第二有源器件和为第二有源器件形成第二源极变性电阻的器件。 耦合到从IDAC输出的电压信号的源极退化电阻和电容补偿了电流，温度，电源和工艺变化。

公开(公告)号：US09280168B2

公开(公告)日：2016-03-08

申请号：US13853813

申请日：2013-03-29

Applicant: Intel Corporation

Inventor： Matthew G. Dayley ,  Yadhu Vamshi S. Vancha

IPC: G06G7/28 ,  G05F3/08 ,  G11C7/14 ,  G11C27/02

CPC classification number: G11C5/147 ,  G05F3/08 ,  G05F3/26 ,  G11C7/10 ,  G11C7/14 ,  G11C27/02 ,  G11C27/024

Abstract: A highly distributed current reference for a solid-state memory comprises a centrally located current digital-to-analog converter (IDAC) and a plurality of remotely located tile current references. The IDAC comprises a first active device that generates a reference current, and a device that forms a first source degeneration resistance for the first active device. The IDAC outputs a voltage signal that represents a magnitude of the reference current. A remotely located tile current reference comprises a second active device and a device that forms a second source degeneration resistance for the second active device. The source degeneration resistances and capacitance coupled to the voltage signal output from the IDAC compensate for current, temperature, supply and process variations.

Abstract translation: 用于固态存储器的高分布式电流参考包括位于中心的当前数模转换器（IDAC）和多个远程定位的瓦片电流参考。 IDAC包括产生参考电流的第一有源器件和形成第一有源器件的第一源极退变电阻的器件。 IDAC输出表示参考电流大小的电压信号。 远程定位的瓦片电流参考包括第二有源器件和为第二有源器件形成第二源极变性电阻的器件。 耦合到从IDAC输出的电压信号的源极退化电阻和电容补偿了电流，温度，电源和工艺变化。