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Patent Agency Ranking
公开(公告)号：US20230033277A1
公开(公告)日：2023-02-02
申请号：US17390425
申请日：2021-07-30
Applicant: Intel Corporation
Inventor： William K. Waller , Dhruval J. Patel , Xiannan Di
Abstract: Techniques for repair of a memory die are disclosed. In the illustrative embodiment, a faulty wordline (or bitline) can be remapped to a redundant wordline on the same layer by entering the address of the faulty wordline in a repair table for the layer. If there are more faulty wordlines on a layer than redundant wordlines available on the layer, the faulty wordlines can be remapped to redundant wordlines on a different layer, and the address of the faulty wordline can be placed in a repair table for the different layer. When a memory operation is received, the wordline address for the memory operation is checked against the repair tables to check if it remapped.
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公开(公告)号：US10903793B2
公开(公告)日：2021-01-26
申请号：US15640218
申请日：2017-06-30
Applicant: Intel Corporation
Inventor： Dhruval J. Patel , Liyao Miao , Matthew Dayley
Abstract: Technology for a system operable to regulate an output voltage is described. The system can include an active amplifier configured to amplify an input voltage to produce the output voltage when there is active current consumption at the output voltage of the system. The system can include a standby amplifier configured to switch between amplifying the input voltage for a defined period of time and not amplifying the input voltage for a defined period of time to maintain a desired value for the output voltage of the system.
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公开(公告)号：US12277985B2
公开(公告)日：2025-04-15
申请号：US17390425
申请日：2021-07-30
Applicant: Intel Corporation
Inventor： William K. Waller , Dhruval J. Patel , Xiannan Di
Abstract: Techniques for repair of a memory die are disclosed. In the illustrative embodiment, a faulty wordline (or bitline) can be remapped to a redundant wordline on the same layer by entering the address of the faulty wordline in a repair table for the layer. If there are more faulty wordlines on a layer than redundant wordlines available on the layer, the faulty wordlines can be remapped to redundant wordlines on a different layer, and the address of the faulty wordline can be placed in a repair table for the different layer. When a memory operation is received, the wordline address for the memory operation is checked against the repair tables to check if it remapped.
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公开(公告)号：US10854245B1
公开(公告)日：2020-12-01
申请号：US16514780
申请日：2019-07-17
Applicant: Intel Corporation
Inventor： Setul M. Shah , William Sheung , Dhruval J. Patel
Abstract: Techniques to adapt the DC bias of voltage regulators for memory devices as a function of bandwidth demand are described. In one example, a non-volatile memory device includes a plurality of voltage regulator slices, wherein outputs of the plurality of voltage regulators slices are tied together to provide a voltage to perform operations on the array. The voltage regulator slices can be enabled or disabled based on a signal from a memory controller, such as an indication of an upcoming change in bandwidth demand for a rank including the memory device.
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公开(公告)号：US20190006993A1
公开(公告)日：2019-01-03
申请号：US15640218
申请日：2017-06-30
Applicant: Intel Corporation
Inventor： Dhruval J. Patel , Liyao Miao , Matthew G. Dayley
Abstract: Technology for a system operable to regulate an output voltage is described. The system can include an active amplifier configured to amplify an input voltage to produce the output voltage when there is active current consumption at the output voltage of the system. The system can include a standby amplifier configured to switch between amplifying the input voltage for a defined period of time and not amplifying the input voltage for a defined period of time to maintain a desired value for the output voltage of the system.
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