公开(公告)号：US20190334034A1

公开(公告)日：2019-10-31

申请号：US16509421

申请日：2019-07-11

Applicant: Intel Corporation

Inventor： Michael JACKSON ,  Anand MURTHY ,  Glenn GLASS ,  Saurabh MORARKA ,  Chandra MOHAPATRA

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/10 ,  H01L29/06 ,  H01L29/32

Abstract: Methods of forming a strained channel device utilizing dislocations disposed in source/drain structures are described. Those methods and structures may include forming a thin silicon germanium material in a source/drain opening of a device comprising silicon, wherein multiple dislocations are formed in the silicon germanium material. A source/drain material may be formed on the thin silicon germanium material, wherein the dislocations induce a tensile strain in a channel region of the device.