公开(公告)号：US20210408282A1

公开(公告)日：2021-12-30

申请号：US16912103

申请日：2020-06-25

Applicant: Intel Corporation

Inventor： Vishal TIWARI ,  Rishabh MEHANDRU ,  Dan S. LAVRIC ,  Michal MLECZKO ,  Szuya S. LIAO

IPC: H01L29/78 ,  H01L29/40 ,  H01L21/28 ,  H01L29/51

Abstract: Field effect transistors having field effect transistors having gate dielectrics with dipole layers and having gate stressor layers, and methods of fabricating field effect transistors having gate dielectrics with dipole layers and having gate stressor layers, are described. In an example, an integrated circuit structure includes a semiconductor channel structure including a monocrystalline material. A gate dielectric is over the semiconductor channel structure, the gate dielectric including a high-k dielectric layer on a dipole material layer, and the dipole material layer distinct from the high-k dielectric layer. A gate electrode has a workfunction layer on the high-k dielectric layer, the workfunction layer including a metal. A first source or drain structure is at a first side of the gate electrode. A second source or drain structure is at a second side of the gate electrode opposite the first side.