公开(公告)号：US20220172784A1

公开(公告)日：2022-06-02

申请号：US17107679

申请日：2020-11-30

Applicant: Intel Corporation

Inventor： Shantanu R. RAJWADE ,  Bayan NASRI ,  Tzu-Ning FANG ,  Rezaul HAQUE ,  Dhanashree R. KULKARNI ,  Narayanan RAMANAN ,  Matin AMANI ,  Ahsanur RAHMAN ,  Seong Je PARK ,  Netra MAHULI

IPC: G11C16/26 ,  G11C13/00

Abstract: A sense circuit performs a multistage boost, including a boost during precharge operation and a boost during the standard boost operation. The sense circuit includes an output transistor to drive a sense output based on current through a sense node which drives a gate of the output transistor. The sense circuit includes a precharge circuit to precharge the sense node and the gate of the output transistor and a boost circuit to boost the sense node. The boost circuit can be boosted during precharge by a first boost voltage, resulting in a lower boost applied to the sense node after precharge. The boost circuit boosts up the sense node by a second boost voltage lower than the first boost voltage. The boost circuit boosts the sense node down by the full boost voltage of the first boost voltage plus the second boost voltage after sensing.