公开(公告)号：US10854607B2

公开(公告)日：2020-12-01

申请号：US16853545

申请日：2020-04-20

申请人： Intel Corporation

发明人： Chia-Hong Jan ,  Walid M Hafez ,  Jeng-Ya David Yeh ,  Hsu-Yu Chang ,  Neville L Dias ,  Chanaka D Munasinghe

IPC分类号： H01L27/092 ,  H01L21/82 ,  H01L29/10 ,  H01L21/8238 ,  H01L29/66 ,  H01L29/78 ,  H01L21/225 ,  H01L29/06 ,  H01L29/08

摘要： An impurity source film is formed along a portion of a non-planar semiconductor fin structure. The impurity source film may serve as source of an impurity that becomes electrically active subsequent to diffusing from the source film into the semiconductor fin. In one embodiment, an impurity source film is disposed adjacent to a sidewall surface of a portion of a sub-fin region disposed between an active region of the fin and the substrate and is more proximate to the substrate than to the active area.

公开(公告)号：US10340273B2

公开(公告)日：2019-07-02

申请号：US15409435

申请日：2017-01-18

申请人： Intel Corporation

发明人： Chia-Hong Jan ,  Walid M Hafez ,  Jeng-Ya David Yeh ,  Hsu-Yu Chang ,  Neville L Dias ,  Chanaka D Munasinghe

IPC分类号： H01L27/092 ,  H01L21/82 ,  H01L29/10 ,  H01L21/8238 ,  H01L29/66 ,  H01L29/78 ,  H01L21/225 ,  H01L29/06 ,  H01L29/08

摘要： An impurity source film is formed along a portion of a non-planar semiconductor fin structure. The impurity source film may serve as source of an impurity that becomes electrically active subsequent to diffusing from the source film into the semiconductor fin. In one embodiment, an impurity source film is disposed adjacent to a sidewall surface of a portion of a sub-fin region disposed between an active region of the fin and the substrate and is more proximate to the substrate than to the active area.