公开(公告)号：US11695008B2

公开(公告)日：2023-07-04

申请号：US16846896

申请日：2020-04-13

Applicant: Intel Corporation

Inventor： Curtis Tsai ,  Chia-Hong Jan ,  Jeng-Ya David Yeh ,  Joodong Park ,  Walid M. Hafez

IPC: H01L27/092 ,  H01L29/66 ,  H01L29/78 ,  H01L29/40 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/49 ,  H01L21/28 ,  H01L29/423 ,  H01L29/51

CPC classification number: H01L27/0922 ,  H01L21/823431 ,  H01L21/823456 ,  H01L21/823462 ,  H01L27/0886 ,  H01L27/0924 ,  H01L29/408 ,  H01L29/40114 ,  H01L29/42364 ,  H01L29/4966 ,  H01L29/66484 ,  H01L29/66795 ,  H01L29/7855 ,  H01L29/512 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/7831 ,  H01L29/7851

Abstract: Two or more types of fin-based transistors having different gate structures and formed on a single integrated circuit are described. The gate structures for each type of transistor are distinguished at least by the thickness or composition of the gate dielectric layer(s) or the composition of the work function metal layer(s) in the gate electrode. Methods are also provided for fabricating an integrated circuit having at least two different types of fin-based transistors, where the transistor types are distinguished by the thickness and composition of the gate dielectric layer(s) and/or the thickness and composition of the work function metal in the gate electrode.

公开(公告)号：US10854607B2

公开(公告)日：2020-12-01

申请号：US16853545

申请日：2020-04-20

Applicant: Intel Corporation

Inventor： Chia-Hong Jan ,  Walid M Hafez ,  Jeng-Ya David Yeh ,  Hsu-Yu Chang ,  Neville L Dias ,  Chanaka D Munasinghe

IPC: H01L27/092 ,  H01L21/82 ,  H01L29/10 ,  H01L21/8238 ,  H01L29/66 ,  H01L29/78 ,  H01L21/225 ,  H01L29/06 ,  H01L29/08

Abstract: An impurity source film is formed along a portion of a non-planar semiconductor fin structure. The impurity source film may serve as source of an impurity that becomes electrically active subsequent to diffusing from the source film into the semiconductor fin. In one embodiment, an impurity source film is disposed adjacent to a sidewall surface of a portion of a sub-fin region disposed between an active region of the fin and the substrate and is more proximate to the substrate than to the active area.

公开(公告)号：US20200251471A1

公开(公告)日：2020-08-06

申请号：US16853545

申请日：2020-04-20

Applicant: Intel Corporation

Inventor： Chia-Hong Jan ,  Walid M. Hafez ,  Jeng-Ya David Yeh ,  Hsu-Yu Chang ,  Neville L. Dias ,  Chanaka D. Munasinghe

IPC: H01L27/092 ,  H01L21/8238 ,  H01L29/66 ,  H01L29/78 ,  H01L21/225 ,  H01L29/06 ,  H01L29/08 ,  H01L29/10

Abstract: An impurity source film is formed along a portion of a non-planar semiconductor fin structure. The impurity source film may serve as source of an impurity that becomes electrically active subsequent to diffusing from the source film into the semiconductor fin. In one embodiment, an impurity source film is disposed adjacent to a sidewall surface of a portion of a sub-fin region disposed between an active region of the fin and the substrate and is more proximate to the substrate than to the active area.

公开(公告)号：US20190287973A1

公开(公告)日：2019-09-19

申请号：US16430203

申请日：2019-06-03

Applicant: Intel Corporation

Inventor： Chia-Hong Jan ,  Walid M. Hafez ,  Jeng-Ya David Yeh ,  Hsu-Yu Chang ,  Neville L. Dias ,  Chanaka D. Munasinghe

IPC: H01L27/092 ,  H01L29/10 ,  H01L29/08 ,  H01L21/225 ,  H01L21/8238 ,  H01L29/06 ,  H01L29/78 ,  H01L29/66

Abstract: An impurity source film is formed along a portion of a non-planar semiconductor fin structure. The impurity source film may serve as source of an impurity that becomes electrically active subsequent to diffusing from the source film into the semiconductor fin. In one embodiment, an impurity source film is disposed adjacent to a sidewall surface of a portion of a sub-fin region disposed between an active region of the fin and the substrate and is more proximate to the substrate than to the active area.

公开(公告)号：US10096599B2

公开(公告)日：2018-10-09

申请号：US14977367

申请日：2015-12-21

Applicant: Intel Corporation

Inventor： Curtis Tsai ,  Chia-Hong Jan ,  Jeng-Ya David Yeh ,  Joodong Park ,  Walid M. Hafez

IPC: H01L27/092 ,  H01L29/66 ,  H01L29/40 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/49 ,  H01L29/423 ,  H01L29/78 ,  H01L29/51

Abstract: Two or more types of fin-based transistors having different gate structures and formed on a single integrated circuit are described. The gate structures for each type of transistor are distinguished at least by the thickness or composition of the gate dielectric layer(s) or the composition of the work function metal layer(s) in the gate electrode. Methods are also provided for fabricating an integrated circuit having at least two different types of fin-based transistors, where the transistor types are distinguished by the thickness and composition of the gate dielectric layer(s) and/or the thickness and composition of the work function metal in the gate electrode.

公开(公告)号：US10340273B2

公开(公告)日：2019-07-02

申请号：US15409435

申请日：2017-01-18

Applicant: Intel Corporation

Inventor： Chia-Hong Jan ,  Walid M Hafez ,  Jeng-Ya David Yeh ,  Hsu-Yu Chang ,  Neville L Dias ,  Chanaka D Munasinghe

IPC: H01L27/092 ,  H01L21/82 ,  H01L29/10 ,  H01L21/8238 ,  H01L29/66 ,  H01L29/78 ,  H01L21/225 ,  H01L29/06 ,  H01L29/08

Abstract: An impurity source film is formed along a portion of a non-planar semiconductor fin structure. The impurity source film may serve as source of an impurity that becomes electrically active subsequent to diffusing from the source film into the semiconductor fin. In one embodiment, an impurity source film is disposed adjacent to a sidewall surface of a portion of a sub-fin region disposed between an active region of the fin and the substrate and is more proximate to the substrate than to the active area.

公开(公告)号：US20170125419A1

公开(公告)日：2017-05-04

申请号：US15409435

申请日：2017-01-18

Applicant: Intel Corporation

Inventor： Chia-Hong Jan ,  Walid M. Hafez ,  Jeng-Ya David Yeh ,  Hsu-Yu Chang ,  Neville L. Dias ,  Chanaka D. Munasinghe

IPC: H01L27/092 ,  H01L29/66 ,  H01L29/06 ,  H01L21/225 ,  H01L21/8238

CPC classification number: H01L27/0924 ,  H01L21/2256 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/823878 ,  H01L21/823892 ,  H01L27/0928 ,  H01L29/0649 ,  H01L29/0847 ,  H01L29/1095 ,  H01L29/66803 ,  H01L29/7851

Abstract: An impurity source film is formed along a portion of a non-planar semiconductor fin structure. The impurity source film may serve as source of an impurity that becomes electrically active subsequent to diffusing from the source film into the semiconductor fin. In one embodiment, an impurity source film is disposed adjacent to a sidewall surface of a portion of a sub-fin region disposed between an active region of the fin and the substrate and is more proximate to the substrate than to the active area.