公开(公告)号：US20230197840A1

公开(公告)日：2023-06-22

申请号：US17557827

申请日：2021-12-21

Applicant: Intel Corporation

Inventor： Sanyam Bajaj ,  Michael S. Beumer ,  Robert Ehlert ,  Gregory P. McNerney ,  Nicholas Minutillo ,  Xiaoye Qin ,  Johann C. Rode ,  Atsunori Tanaka ,  Suresh Vishwanath ,  Patrick M. Wallace

IPC: H01L29/778 ,  H01L29/20 ,  H01L29/205 ,  H01L29/423 ,  H01L29/66

CPC classification number: H01L29/7785 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/42316 ,  H01L29/66462

Abstract: In one embodiment, a transistor includes a substrate, a buffer layer on the substrate a channel layer on the buffer layer, and one or more polarization layers on the channel layer. The one or more polarization layers include a group III-N material comprising a first group III constituent and a second group III constituent. The transistor further includes a plurality of p-type doped layers on the one or more polarization layers. Each of the plurality of p-type doped layers includes a first p-type dopant and the III-N material, wherein each successive layer of the first p-type doped layers has a lower proportion of the first group III constituent to the second group III constituent relative to a layer below it. The transistor also includes a p-type doped layer on the plurality of p-type doped layers comprising a second p-type dopant and a group III-N material.

公开(公告)号：US20230132548A1

公开(公告)日：2023-05-04

申请号：US17519429

申请日：2021-11-04

Applicant: Intel Corporation

Inventor： Atsunori Tanaka ,  Sanyam Bajaj ,  Michael S. Beumer ,  Robert Ehlert ,  Gregory P. McNerney ,  Nicholas Minutillo ,  Johann C. Rode ,  Suresh Vishwanath ,  Patrick M. Wallace

IPC: H01L29/778 ,  H01L29/20 ,  H01L29/66

Abstract: In one embodiment, a transistor is formed by a process comprising forming a buffer layer on a substrate, the buffer layer comprising a first group III-nitride (III-N) material (e.g., AlGaN), forming a channel layer on the buffer layer, the channel layer comprising a second III-N material (e.g., GaN), forming a polarization layer on the channel layer, the polarization layer comprising a third III-N material (e.g., AlGaN), flowing a p-type dopant precursor compound (e.g., Cp2Mg) after forming the polarization layer, forming a p-type doped layer (e.g., p-GaN) on the polarization layer, the p-type doped layer comprising a p-type dopant (e.g., Mg) and a fourth III-N material (e.g., GaN), forming a source region adjacent one end of the channel layer, and forming a drain region adjacent another end of the channel layer.