公开(公告)号：US20230143021A1

公开(公告)日：2023-05-11

申请号：US17521760

申请日：2021-11-08

申请人： Intel Corporation

发明人： Daniel B. OBrien ,  Jeffrey S. Leib ,  James Y. Jeong ,  Chia-Hong Jan ,  Peng Bai ,  Seungdo An ,  Pavel S. Plekhanov ,  Debashish Basu

IPC分类号： H01L23/522 ,  H01L23/532 ,  H01L21/768

CPC分类号： H01L23/5226 ,  H01L23/53266 ,  H01L23/53238 ,  H01L21/76877 ,  H01L21/76843

摘要： Integrated circuit interconnect structure compatible with single damascene techniques and that includes a non-copper via comprising metal(s) of low resistivity that can be deposited at low temperature in a manner that also ensures good adhesion. Metal(s) suitable for the non-copper via may have BCC crystallinity that can advantageously template favorable crystallinity within a diffusion barrier of the upper-level interconnect feature, further reducing electrical resistance of an interconnect structure.