公开(公告)号：US11444205B2

公开(公告)日：2022-09-13

申请号：US16143001

申请日：2018-09-26

Applicant: Intel Corporation

Inventor： Arnab Sen Gupta ,  Matthew Metz ,  Benjamin Chu-Kung ,  Abhishek Sharma ,  Van H. Le ,  Miriam R. Reshotko ,  Christopher J. Jezewski ,  Ryan Arch ,  Ande Kitamura ,  Jack T. Kavalieros ,  Seung Hoon Sung ,  Lawrence Wong ,  Tahir Ghani

IPC: H01L29/786 ,  H01L23/31 ,  H01L29/45 ,  H01L29/40 ,  H01L29/66 ,  H01L27/24 ,  H01L27/108

Abstract: Embodiments herein describe techniques for a semiconductor device including a substrate and a transistor above the substrate. The transistor includes a channel layer above the substrate, a conductive contact stack above the substrate and in contact with the channel layer, and a gate electrode separated from the channel layer by a gate dielectric layer. The conductive contact stack may be a drain electrode or a source electrode. In detail, the conductive contact stack includes at least a metal layer, and at least a metal sealant layer to reduce hydrogen diffused into the channel layer through the conductive contact stack. Other embodiments may be described and/or claimed.