公开(公告)号：US20240210821A1

公开(公告)日：2024-06-27

申请号：US18145038

申请日：2022-12-22

Applicant: Intel Corporation

Inventor： Charles Cameron Mokhtarzadeh ,  James Blackwell ,  Scott Semproni ,  Scott B. Clendenning ,  Lauren Elizabeth Doyle

IPC: G03F7/00 ,  G03F7/038 ,  G03F7/16 ,  G03F7/20 ,  G03F7/40

CPC classification number: G03F7/0032 ,  G03F7/038 ,  G03F7/162 ,  G03F7/167 ,  G03F7/2004 ,  G03F7/40

Abstract: Precursors and methods related to a bismuth oxy-carbide-based photoresist are disclosed herein. In some embodiments, a method for forming a bismuth oxy-carbide-based photoresist may include exposing a bismuth-containing precursor and a co-reagent to a substrate to form a bismuth oxy-carbide-based photoresist having a formula BixOyCz on the substrate, where x is 1 or 2, y is between 2 and 4, and z is between 1 and 5, the bismuth-containing precursor having a formula R′Bi(NR2)2 or R′2BiNR2 where R includes methyl, ethyl, isopropyl, tert-butyl, or trimethylsilyl, or NR2 is piperidine, and R′ includes methyl, ethyl, isopropyl, tert-butyl, cyclo-pentyl, cyclo-hexyl, methyl trimethylsilyl, methyl 2-butyl, benzyl, 1-methyl 2-dimethyl propyl, or cyclopentadienyl. In some embodiments, the co-reagent includes water, hydrogen peroxide, oxygen, ozone, formic acid, maleic acid, or an alcohol.

公开(公告)号：US20240201586A1

公开(公告)日：2024-06-20

申请号：US18068732

申请日：2022-12-20

Applicant: Intel Corporation

Inventor： James Blackwell ,  Charles Cameron Mokhtarzadeh ,  Lauren Elizabeth Doyle ,  Eric Mattson ,  Patrick Theofanis ,  John J. Plombon ,  Michael Robinson ,  Marie Krysak ,  Paul Meza-Morales ,  Scott Semproni ,  Scott B. Clendenning

IPC: G03F7/004 ,  G03F7/038 ,  G03F7/16 ,  G03F7/20 ,  G03F7/38

CPC classification number: G03F7/0042 ,  G03F7/038 ,  G03F7/167 ,  G03F7/2004 ,  G03F7/38

Abstract: Precursors and methods related to a tin-based photoresist are disclosed herein. In some embodiments, a method for forming a tin-based photoresist may include exposing a tin-containing precursor and a co-reagent to a substrate to form a photoresist having tin clusters; selectively exposing the photoresist to extreme ultraviolet radiation (EUV); and exposing the photoresist to heat to form, in the region, crosslinking between the tin clusters. In some embodiments, the precursor has a formula R1R2Sn(N(CH3)2)2, and R1 and R2 are selected from the group consisting of neo-silyl, neo-pentyl, phenyl, benzyl, methyl-bis(trimethylsilyl), methyl, ethyl, isopropyl, tert-butyl, n-butyl, N,N-dimethylpropylamine, and N, N-dimethlybutylamine. In other embodiments, the precursor includes a chelating alkyl-amine or alkyl-amide ligand featuring a 5 membered or 6 membered tin-based heterocycle bound κ2-C,N with an alkyl group on the ligand backbone, wherein the alkyl group includes methyl, ethyl, vinyl, hydrogen, or tert-butyl.