公开(公告)号：US20250006790A1

公开(公告)日：2025-01-02

申请号：US18345931

申请日：2023-06-30

Applicant: Intel Corporation

Inventor： Anand Murthy ,  Shishir Pandya ,  James Kally ,  Robert Ehlert ,  Tahir Ghani

IPC: H01L29/08 ,  H01L21/02 ,  H01L29/167 ,  H01L29/45

Abstract: In some implementations, a device may include a channel material. In addition, the device may include a contact metal. The device may include a first layer between the channel material and the contact metal, the first layer having antimony and silicon. Moreover, the device may include a second layer between the contact metal and the first layer, the second layer having phosphorus and silicon.