公开(公告)号：US11276462B2

公开(公告)日：2022-03-15

申请号：US16903004

申请日：2020-06-16

Applicant: Intel Corporation

Inventor： Hemant P. Rao ,  Shylesh Umapathy ,  Sanjay Rangan

IPC: G11C11/00 ,  G11C13/00

Abstract: Examples may include techniques to implement a SET write operation to a selected memory cell include in a memory array. Examples include selecting the memory cell that includes phase change material and applying various currents over various periods of time during a nucleation stage and a crystal growth stage to cause the memory cell to be in a SET logical state.

公开(公告)号：US11810617B2

公开(公告)日：2023-11-07

申请号：US17669810

申请日：2022-02-11

Applicant: Intel Corporation

Inventor： Hemant P. Rao ,  Shylesh Umapathy ,  Sanjay Rangan

IPC: G11C11/00 ,  G11C13/00

CPC classification number: G11C13/0004 ,  G11C13/004 ,  G11C13/0009 ,  G11C13/0061 ,  G11C13/0069

Abstract: Examples may include techniques to implement a SET write operation to a selected memory cell include in a memory array. Examples include selecting the memory cell that includes phase change material and applying various currents over various periods of time during a nucleation stage and a crystal growth stage to cause the memory cell to be in a SET logical state.