公开(公告)号：US20250112603A1

公开(公告)日：2025-04-03

申请号：US18374696

申请日：2023-09-29

Applicant: Intel Corporation

Inventor： Ashoke RAVI ,  Ofir DEGANI ,  Sashank KRISHNAMURTHY ,  Soumya GUPTA

IPC: H03F3/45 ,  H03F1/02 ,  H03F1/22

Abstract: An amplifier structure may include a first amplifier substructure having a first amplifier and a first filter structure and provide a first high frequency output signal and a first low frequency output signal having a frequency lower than a frequency of the first high frequency output signal. It may include a second amplifier substructure having a second amplifier and a second filter structure and provide a second high frequency output signal and a second low frequency output signal having a frequency lower than the frequency of the second high frequency output signal. It may include a first combination node configured to receive the first high frequency output signal and the second low frequency output signal and to provide a first amplified signal, and a second combination node configured to receive the first low frequency output signal and the second high frequency output signal and to provide a second amplified signal.