公开(公告)号：US20220068907A1

公开(公告)日：2022-03-03

申请号：US16950042

申请日：2020-11-17

Applicant: Intel Corporation

Inventor： Ahmet TURA ,  Steven G. JALOVIAR

IPC: H01L27/02 ,  B82Y10/00 ,  B82Y40/00 ,  H03K19/08

Abstract: Embodiments of the disclosure are in the field of advanced integrated circuit structure fabrication and, in particular, 10 nanometer node and smaller integrated circuit structure fabrication and the resulting structures. In an example, an integrated circuit structure includes a first plurality of logic gate structures having a first pitch between adjacent ones of the first plurality of logic gate structures. The integrated circuit structure also includes a second plurality of logic gate structures having a second pitch between adjacent ones of the second plurality of logic gate structures. The second pitch is greater than the first pitch.