公开(公告)号：US20200294969A1

公开(公告)日：2020-09-17

申请号：US16355623

申请日：2019-03-15

Applicant: Intel Corporation

Inventor： Willy Rachmady ,  Cheng-Ying Huang ,  Ehren Mannebach ,  Anh Phan ,  Caleb Shuan Chia Barrett ,  Jay Prakash Gupta ,  Nishant Gupta ,  Kaiwen Hsu ,  Byungki Jung ,  Srinivasa Aravind Killampalli ,  Justin Gary Railsback ,  Supanee Sukrittanon ,  Prashant Wadhwa

IPC: H01L25/065 ,  H01L27/085 ,  H01L29/78 ,  H01L21/84 ,  H01L27/06

Abstract: Disclosed herein are stacked transistors with dielectric between source/drain materials of different strata, as well as related methods and devices. In some embodiments, an integrated circuit structure may include stacked strata of transistors, wherein a dielectric material is between source/drain materials of adjacent strata, and the dielectric material is conformal on underlying source/drain material.

公开(公告)号：US11532619B2

公开(公告)日：2022-12-20

申请号：US16367175

申请日：2019-03-27

Applicant: Intel Corporation

Inventor： Willy Rachmady ,  Cheng-Ying Huang ,  Gilbert Dewey ,  Jack Kavalieros ,  Caleb Barrett ,  Jay P. Gupta ,  Nishant Gupta ,  Kaiwen Hsu ,  Byungki Jung ,  Aravind S. Killampalli ,  Justin Railsback ,  Supanee Sukrittanon ,  Prashant Wadhwa

IPC: H01L27/088 ,  H01L29/06 ,  H01L29/16 ,  H01L29/78 ,  H01L21/02 ,  H01L21/8234 ,  H01L29/423

Abstract: Transistor structures including a non-planar body that has an active portion comprising a semiconductor material of a first height that is variable, and an inactive portion comprising an oxide of the semiconductor material of a second variable height, complementary to the first height. Gate electrodes and source/drain terminals may be coupled through a transistor channel having any width that varies according to the first height. Oxidation of a semiconductor material may be selectively catalyzed to convert a desired portion of a non-planar body into the oxide of the semiconductor material. Oxidation may be enhanced through the application of a catalyst, such as one comprising metal and oxygen, for example.