公开(公告)号：US11621334B2

公开(公告)日：2023-04-04

申请号：US16260600

申请日：2019-01-29

Applicant: Intel Corporation

Inventor： Said Rami ,  Hyung-Jin Lee ,  Surej Ravikumar ,  Kinyip Phoa

IPC: H01L29/417 ,  H01L29/66 ,  H01L29/78 ,  H01L27/088 ,  H01L29/06 ,  H01L29/08 ,  H01L27/12 ,  G06F13/10

Abstract: Embodiments of the disclosure are in the field of advanced integrated circuit structure fabrication. In an example, an integrated circuit structure includes a fin including silicon. A gate structure is over the fin, the gate structure having a center. A conductive source trench contact is over the fin, the conductive source trench contact having a center spaced apart from the center of the gate structure by a first distance. A conductive drain trench contact is over the fin, the conductive drain trench contact having a center spaced apart from the center of the gate structure by a second distance, the second distance greater than the first distance by a factor of three.