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公开(公告)号：US10008665B1
公开(公告)日：2018-06-26
申请号：US15391757
申请日：2016-12-27
Applicant: Intel Corporation
Inventor： Daniel Gealy , Andrea Gotti , Dale W. Collins , Swapnil A. Lengade
Abstract: Doping a storage element, a selector element, or both, of a memory cell with a dopant including one or more of aluminum (Al), zirconium (Zr), hafnium (Hf), and silicon (Si), can minimize volume or density changes in a phase change memory as well as minimize electromigration, in accordance with embodiments. In one embodiment, a memory cell includes a first electrode and a second electrode, and a storage element comprising a layer of doped phase change material between the first and second electrodes, wherein the doped phase change material includes one or more of aluminum, zirconium, hafnium, and silicon. The storage element, a selector element, or both can be doped using techniques such as cosputtering or deposition of alternating layers of a dopant layer and a storage (or selector) material.
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公开(公告)号：US10347831B2
公开(公告)日：2019-07-09
申请号：US16007563
申请日：2018-06-13
Applicant: Intel Corporation
Inventor： Daniel Gealy , Andrea Gotti , Dale W. Collins , Swapnil A. Lengade
Abstract: Doping a storage element, a selector element, or both, of a memory cell with a dopant including one or more of aluminum (Al), zirconium (Zr), hafnium (Hf), and silicon (Si), can minimize volume or density changes in a phase change memory as well as minimize electromigration, in accordance with embodiments. In one embodiment, a memory cell includes a first electrode and a second electrode, and a storage element comprising a layer of doped phase change material between the first and second electrodes, wherein the doped phase change material includes one or more of aluminum, zirconium, hafnium, and silicon. The storage element, a selector element, or both can be doped using techniques such as cosputtering or deposition of alternating layers of a dopant layer and a storage (or selector) material.
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