公开(公告)号：US20250105095A1

公开(公告)日：2025-03-27

申请号：US18471356

申请日：2023-09-21

Applicant: Intel Corporation

Inventor： Bozidar Marinkovic ,  Benjamin Kriegel ,  Payam Amin ,  Dolly Natalia Ruiz Amador ,  Thomas Jacroux ,  Makram Abd El Qader ,  Tofizur RAHMAN ,  Xiandong Yang ,  Conor P. Puls

IPC: H01L23/48 ,  H01L23/00 ,  H01L23/528

Abstract: An IC device may include one or more vias for delivering power to one or more transistors in the IC device. A via may have one or more widened ends to increase capacitance and decrease resistance. A transistor may include a source electrode over a source region and a drain electrode over a drain region. The source region or drain region may be in a support structure that has one or more semiconductor materials. The via has a body section and two end sections, the body section is between the end sections. One or both end sections are wider than the body section, e.g., by approximately 6 nanometers to approximately 12 nanometers. One end section is connected to an interconnect at the backside of the support structure. The other end section is connected to a jumper, which is connected to the source electrode or drain electrode.