公开(公告)号：US10340220B2

公开(公告)日：2019-07-02

申请号：US15748608

申请日：2015-08-26

Applicant: Intel Corporation

Inventor： Chen-Guan Lee ,  Vadym Kapinus ,  Pei-Chi Liu ,  Joodong Park ,  Walid M. Hafez ,  Chia-Hong Jan

IPC: H01L23/522 ,  H01L27/06 ,  H01L49/02 ,  H01L29/78 ,  H01L21/86 ,  H01L29/786

Abstract: IC device structures including a lateral compound resistor disposed over a surface of a substrate, and fabrication techniques to form such a resistor in conjunction with fabrication of a transistor. Rather than being stacked vertically, a compound resistive trace may include a plurality of resistive materials arranged laterally over a substrate. Along a resistive trace length, a first resistive material is in contact with a sidewall of a second resistive material. A portion of a first resistive material along a centerline of the resistive trace may be replaced with a second resistive material so that the second resistive material is embedded within the first resistive material.

公开(公告)号：US20190006279A1

公开(公告)日：2019-01-03

申请号：US15748608

申请日：2015-08-26

Applicant: Intel Corporation

Inventor： Chen-Guan Lee ,  Vadym Kapinus ,  Pei-Chi Liu ,  Joodong Park ,  Walid M. Hafez ,  Chia-Hong Jan

IPC: H01L23/522 ,  H01L27/06 ,  H01L49/02 ,  H01L29/78 ,  H01L21/86 ,  H01L29/786

CPC classification number: H01L23/5228 ,  H01L21/86 ,  H01L27/0629 ,  H01L28/00 ,  H01L28/22 ,  H01L28/24 ,  H01L29/785 ,  H01L29/78657

Abstract: IC device structures including a lateral compound resistor disposed over a surface of a substrate, and fabrication techniques to form such a resistor in conjunction with fabrication of a transistor. Rather than being stacked vertically, a compound resistive trace may include a plurality of resistive materials arranged laterally over a substrate. Along a resistive trace length, a first resistive material is in contact with a sidewall of a second resistive material. A portion of a first resistive material along a centerline of the resistive trace may be replaced with a second resistive material so that the second resistive material is embedded within the first resistive material.