公开(公告)号：US10128248B1

公开(公告)日：2018-11-13

申请号：US15650271

申请日：2017-07-14

Applicant: Intel Corporation

Inventor： Karthik Ns ,  Dharmaray Nedalgi ,  Vani Deshpande ,  Leonhard Heiss ,  Amit Kumar Srivastava

IPC: H01L29/76 ,  H01L27/105 ,  H01L23/58 ,  H01L23/00

Abstract: An apparatus is provided which comprises: a stack of transistors of a same conductivity type, the stack including a first transistor and a second transistor coupled in series and having a common node; and a feedback transistor of the same conductivity type coupled to the common node and a gate terminal of the first transistor of the stack.