公开(公告)号：US20230101378A1

公开(公告)日：2023-03-30

申请号：US17448738

申请日：2021-09-24

申请人： Intel Corporation

发明人： Peter BAUMGARTNER ,  Joachim ASSENMACHER ,  Walther LUTZ ,  Martin OSTERMAYR ,  Georg SEIDEMANN

IPC分类号： H01L27/06 ,  H01L23/522 ,  H01L23/532 ,  H01L49/02

摘要： A semiconductor die is disclosed, including a plurality of transistors at a frontside of a semiconductor substrate, a backside inductor at a backside of the semiconductor substrate; and a frontside inductor at the frontside of the semiconductor substrate. The frontside inductor and the backside inductor are inductively coupled.

公开(公告)号：US20230102133A1

公开(公告)日：2023-03-30

申请号：US17448734

申请日：2021-09-24

申请人： Intel Corporation

发明人： Martin OSTERMAYR ,  Walther LUTZ ,  Joachim ASSENMACHER ,  Georg SEIDEMANN

IPC分类号： H01L23/64 ,  H01L23/00

摘要： A semiconductor die is disclosed, including circuitry comprising a transistor at a frontside of a semiconductor substrate, and a backside inductor at a backside of the semiconductor substrate. The backside inductor is electrically connected to the transistor of the circuitry.

公开(公告)号：US20230095162A1

公开(公告)日：2023-03-30

申请号：US17448714

申请日：2021-09-24

申请人： Intel Corporation

发明人： Georg SEIDEMANN ,  Martin OSTERMAYR ,  Walther LUTZ ,  Joachim ASSENMACHER

IPC分类号： H01L23/48 ,  H01L23/00 ,  H01L23/498 ,  H01L23/495 ,  H01L23/31 ,  H01L25/065

摘要： A semiconductor device is provided. The semiconductor device comprises a semiconductor die comprising a semiconductor substrate and a plurality of transistors arranged at a front side of the semiconductor substrate. Further, the semiconductor die comprises a first electrically conductive structure extending from the front side of the semiconductor substrate to a backside of the semiconductor substrate and a second electrically conductive structure extending from the front side of the semiconductor substrate to the backside of the semiconductor substrate. The semiconductor device further comprises an interposer directly attached to the backside of the semiconductor substrate. The interposer comprises a first trace electrically connected to the first electrically conductive structure of the semiconductor die. Further the interposer comprises the first trace or a second trace electrically connected to the second electrically conductive structure of the semiconductor die.