公开(公告)号：US20240114692A1

公开(公告)日：2024-04-04

申请号：US17958395

申请日：2022-10-01

Applicant: Intel Corporation

Inventor： Nazila Haratipour ,  Uygar E. Avci ,  Vachan Kumar ,  Hai Li ,  Yu-Ching Liao ,  Ian Alexander Young

IPC: H01L27/11502 ,  G11C11/22 ,  H01L27/108 ,  H01L29/94

CPC classification number: H01L27/11502 ,  G11C11/221 ,  G11C11/223 ,  H01L27/1087 ,  H01L29/945

Abstract: Inverted pillar capacitors that have a U-shaped insulating layer are oriented with the U-shaped opening of the insulating layer opening toward the surface of the substrate on which the inverted pillar capacitors are formed. The bottom electrodes of adjacent inverted pillar capacitors are isolated from each other by the insulating layers of the adjacent electrodes and the top electrode that fills the volume between the electrodes. By avoiding the need to isolate adjacent bottom electrodes by an isolation dielectric region, inverted pillar capacitors can provide for a greater capacitor density relative to non-inverted pillar capacitors. The insulating layer in inverted pillar capacitors can comprise a ferroelectric material or an antiferroelectric material. The inverted pillar capacitor can be used in memory circuits (e.g., DRAMs) or non-memory applications.